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WG15021R08 PDF预览

WG15021R08

更新时间: 2024-09-11 05:45:07
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
4页 220K
描述
Gate Turn-Off SCR, 1995A I(T)RMS, 2100V V(DRM), 800V V(RRM), 1 Element

WG15021R08 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:PEAK TURN-OFF CURRENT IS 1500A
标称电路换相断开时间:130 µs配置:SINGLE
最大直流栅极触发电流:4000 mAJESD-30 代码:O-CEDB-N2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:1995 A断态重复峰值电压:2100 V
重复峰值反向电压:800 V表面贴装:YES
端子形式:NO LEAD端子位置:END
触发设备类型:GATE TURN-OFF SCR

WG15021R08 数据手册

 浏览型号WG15021R08的Datasheet PDF文件第2页浏览型号WG15021R08的Datasheet PDF文件第3页浏览型号WG15021R08的Datasheet PDF文件第4页 

与WG15021R08相关器件

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WG15021R10 IXYS

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Gate Turn-Off SCR, 1995A I(T)RMS, 2100V V(DRM), 1000V V(RRM), 1 Element
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Silicon Controlled Rectifier, 1995 A, 2100 V, GATE TURN-OFF SCR
WG15021R12 IXYS

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Gate Turn-Off SCR, 1995A I(T)RMS, 2100V V(DRM), 1200V V(RRM), 1 Element
WG15021R13 IXYS

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Gate Turn-Off SCR, 1995A I(T)RMS, 2100V V(DRM), 1300V V(RRM), 1 Element
WG15021R14 IXYS

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Silicon Controlled Rectifier, 1995 A, 2100 V, GATE TURN-OFF SCR
WG15021R15 IXYS

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Gate Turn-Off SCR, 1995A I(T)RMS, 2100V V(DRM), 1500V V(RRM), 1 Element
WG15021R17 IXYS

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Gate Turn-Off SCR, 1995A I(T)RMS, 2100V V(DRM), 1700V V(RRM), 1 Element
WG15021R19 IXYS

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Gate Turn-Off SCR, 1995A I(T)RMS, 2100V V(DRM), 1900V V(RRM), 1 Element
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THYRISTOR|GTO|TO-200AE
WG15022R02 IXYS

获取价格

Silicon Controlled Rectifier, 1995 A, 2200 V, GATE TURN-OFF SCR