Datasheet > W946432AD-6

W946432AD-6

更新时间： 2024-01-13 07:14:39

品牌	Logo	应用领域
华邦 - WINBOND		时钟动态存储器双倍数据速率内存集成电路
页数	文件大小	规格书
40页	451K
描述
DDR DRAM, 2MX32, 0.1ns, CMOS, PQFP100

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技术参数
数据手册

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W946432AD-6 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	包装说明：	LQFP, QFP100,.63X.87
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8542.32.00.02	风险等级：	5.88
访问模式：	FOUR BANK PAGE BURST	最长访问时间：	0.1 ns
其他特性：	AUTO/SELF REFRESH	最大时钟频率 (fCLK)：	166 MHz
I/O 类型：	COMMON	交错的突发长度：	2,4,8
JESD-30 代码：	R-PQFP-G100	JESD-609代码：	e0
长度：	20 mm	内存密度：	67108864 bit
内存集成电路类型：	DDR DRAM	内存宽度：	32
功能数量：	1	端口数量：	1
端子数量：	100	字数：	2097152 words
字数代码：	2000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	2MX32	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	LQFP
封装等效代码：	QFP100,.63X.87	封装形状：	RECTANGULAR
封装形式：	FLATPACK, LOW PROFILE	峰值回流温度（摄氏度）：	NOT SPECIFIED
电源：	2.5 V	认证状态：	Not Qualified
座面最大高度：	1.6 mm	自我刷新：	YES
连续突发长度：	2,4,8	子类别：	DRAMs
最大供电电压 (Vsup)：	2.65 V	最小供电电压 (Vsup)：	2.35 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	QUAD
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	14 mm
Base Number Matches：	1

W946432AD-6 数据手册

W946432AD

PIN DESCRIPTION

PIN NAME

FUNCTION

DESCRIPTION

All address and control input signals are sampled on the crossing of the positive edge of CLK

and negative edge of . Output (read) data is referenced to the crossings of CLK and

Differential clock

input

CLK

(both directions of crossing).

CLK,

CLK

CKE HIGH activates, and CKE LOW deactivates internal clock signals, and device input

buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER-DOWN and

SELF REFRESH operation (all banks idle), or ACTIVE POWER-DOWN (row ACTIVE in any

bank). CKE is synchronous for POWER-DOWN entry and exit, and for SELF REFRESH entry.

CKE is asynchronous for SELF REFRESH exit, and for output disable. CKE must be

CKE

Clock Enable

maintained high throughout READ and WRITE accesses. Input buffers, excluding CLK,

CLK

and CKE are disabled during POWER-DOWN. Input buffers, excluding CKE are disabled

during SELF REFRESH.

All commands are masked when

is registered HIGH.

provides for external bank

Chip Select

selection on systems with multiple banks.

is considered part of the command code.

RAS CAS

Command Inputs

and WE (along with

) define the command being entered.

RAS CAS

DM is an input mask signal for writes data. Input data is masked when DM is sampled HIGH

along with that input data during a WRITE access. DM is sampled on both edges of DQS.

Although DM pins are input only, the DM loading matches the DQ and DQS loading.

Input Data Mask

Bank Address

BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRECHARGE command is

being applied.

BA0, BA1

Provide the row address for ACTIVE commands, and the column address and AUTO

PRECHARGE bit for READ/WRITE commands, to select one location out of the memory array

in the respective bank. A8 is sampled during a PRECHARGE command to determine whether

the PRECHARGE applies to one bank (A8 LOW) or all banks (A8 HIGH). If only one bank is

to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op-

code during a MODE REGISTER SET command. BA0 and BA1 define which mode register is

loaded during the MODE REGISTER SET command (MRS or EMRS).

A0-A10

Address Input

Data Input/Output Data bus

Output with read data, input with write data. Edge-aligned with read data, centered in write

data. Used to capture write data.

DQS

Data Strobe

VDDQ

VSSQ

DQ Power

2.5V ± 0.2V.

Ground.

DQ Ground

Supply Power

VDD

VSS

2.5V ± 0.2V

Ground.

No Connection

No connection

VREF

SSTL_2 reference voltage.

1 234 5 6 7...40

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与W946432AD-6相关器件

型号	品牌	描述	获取价格	数据表
W9464G2IB-4	WINBOND	DDR DRAM, 512KX32, 0.6ns, CMOS, PBGA144, 12 X 12 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, LFBGA	获取价格
W9464G2IB-5	WINBOND	DDR DRAM, 512KX32, 0.7ns, CMOS, PBGA144, 12 X 12 MM, 1.40 MM HEIGHT, ROHS COMPLIANT, LFBGA	获取价格
W9464G6IB	WINBOND	1M × 4 BANKS × 16 BITS DDR SDRAM	获取价格
W9464G6IH	WINBOND	1M Ã 4 BANKS Ã 16 BITS DDR SDRAM	获取价格
W9464G6IH-4	WINBOND	DDR DRAM, 4MX16, 0.65ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66	获取价格
W9464G6IH-5	WINBOND	DDR DRAM, 4MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, ROHS COMPLIANT, TSOP2-66	获取价格

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