Datasheet > W947D2CBHX6G

W947D2CBHX6G

更新时间： 2022-12-29 21:33:28

品牌	Logo	应用领域
华邦 - WINBOND		/
页数	文件大小	规格书
65页	1537K
描述
512Mb Mobile LPSDR

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W947D2CBHX6G 数据手册

W989D6CB / W989D2CB

512Mb Mobile LPSDR

1. GENERAL DESCRIPTION

The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing

536,870,912 memory cells fabricated with Winbond high performance process technology.

It is designed to consume less power than the ordinary SDRAM with low power features essential

for applications which use batteries. It is available in two organizations: 4,194,304-words × 4 banks

× 32 bits or 8,388,608 words × 4 banks × 16 bits. The device operates in a fully synchronous

mode, and the output data are synchronized to positive edges of the system clock and is capable

of delivering data at clock rate up to 166MHz. The device supports special low power functions

such as Partial Array Self Refresh (PASR) and Automatic Temperature Compensated Self Refresh

(ATCSR).

The Low Power SDRAM is suitable for 2.5G / 3G cellular phone, PDA, digital still camera, mobile

game consoles and other handheld applications where large memory density and low power

consumption are required. The device operates from 1.8V power supply, and supports the 1.8V

LVCMOS bus interface.

2. FEATURES

 Power supply VDD = 1.7V~1.95V



CAS Latency: 2 and 3

 VDDQ = 1.7V~1.95V

 Burst Length: 1, 2, 4, 8, and full page

 Refresh: refresh cycle 64ms

 Interface: LVCMOS

 Frequency : 166MHz(-6),133MHz(-75)

 Programmable Partial Array Self Refresh

 Power Down Mode

 Support package :

 Deep Power Down Mode (DPD)

 Programmable output buffer driver strength

 Automatic Temperature Compensated Self Refresh

54 balls VFBGA (x16)

90 balls VFBGA (x32)

 Operating Temperature Range

Extended (-25°C ~ +85°C)

Industrial (-40°C ~ +85°C)

Publication Release Date : August 07, 2013

Revision : A01-006

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