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W45B012P PDF预览

W45B012P

更新时间: 2024-09-16 22:14:47
品牌 Logo 应用领域
华邦 - WINBOND 闪存
页数 文件大小 规格书
16页 281K
描述
1M x 1 SERIAL FLASH MEMORY

W45B012P 技术参数

生命周期:Obsolete零件包装代码:QFJ
包装说明:QCCJ, LDCC32,.5X.6针数:32
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.84
最大时钟频率 (fCLK):20 MHz数据保留时间-最小值:20
耐久性:10000 Write/Erase CyclesJESD-30 代码:R-PQCC-J32
长度:13.97 mm内存密度:1048576 bit
内存集成电路类型:FLASH内存宽度:1
功能数量:1端子数量:32
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:1MX1
封装主体材料:PLASTIC/EPOXY封装代码:QCCJ
封装等效代码:LDCC32,.5X.6封装形状:RECTANGULAR
封装形式:CHIP CARRIER并行/串行:SERIAL
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:3.56 mm
串行总线类型:SPI最大待机电流:0.000015 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:J BEND端子节距:1.27 mm
端子位置:QUAD类型:NOR TYPE
宽度:11.43 mm写保护:HARDWARE
Base Number Matches:1

W45B012P 数据手册

 浏览型号W45B012P的Datasheet PDF文件第2页浏览型号W45B012P的Datasheet PDF文件第3页浏览型号W45B012P的Datasheet PDF文件第4页浏览型号W45B012P的Datasheet PDF文件第5页浏览型号W45B012P的Datasheet PDF文件第6页浏览型号W45B012P的Datasheet PDF文件第7页 
Preliminary W45B012  
´ 1 SERIAL FLASH MEMORY  
1M  
GENERAL DESCRIPTION  
The W45B012 is manufactured with Winbond’s high performance CMOS WinFlash technology. The  
Serial Flash is organized as 32 sectors of 4096 Bytes for the W45B012. The memory is accessed for  
Read or Erase/Program by the SPI bus compatible serial protocol. The bus signals are: serial data  
input (SI), serial data output (SO), serial clock (SCK), write protect (#WP), chip enable (#CE), and  
hardware reset (#RESET). This device is offered in 8L SON and 32L PLCC package.  
FEATURES  
· Automatic Write Timing  
- Internal VPP Generation  
· End-of-Write Detection  
- Software Status  
· Single 2.7 - 3.6V Read and Write Operations  
· Serial Interface Architecture  
- SPI Compatible: Mode 0 and Mode 3  
· Byte Serial Read with Single Command  
· Superior Reliability  
· 20 MHz Max Clock Frequency  
· Hardware Reset Pin (#RESET)  
- Resets the device to Standby Mode  
· TTL Compatibility  
- Endurance: 10,000 Cycles (typ.)  
- 20 years Data Retention  
· Low Power Consumption  
· Hardware Data Protection  
- Active Current: 30 mA (max)  
- Standby Current: 15 mA (max)  
· Sector or Chip-Erase Capability  
- Uniform 4 KByte sectors  
- Protects/Unprotects the device from Write  
operation  
· Packages Available  
- 8 SON (5 x 6 mm), 32L PLCC  
· Fast Erase and Byte-Program  
- Chip-Erase Time: 100 mS (Max.)  
- Sector-Erase Time: 25 mS (Max.)  
- Byte-Program Time: 50 mS (Max.)  
Publication Release Date: April 18, 2002  
Revision A1  
- 1 -  

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