W39L040P-70B

更新时间： 2024-11-08 22:14:51

品牌	Logo	应用领域
华邦 - WINBOND		/
页数	文件大小	规格书
27页	332K
描述
512 K X 8 CMOS FLASH MEMORY

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数据手册

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W39L040P-70B 数据手册

W39L040

512K × 8 CMOS FLASH MEMORY

1. GENERAL DESCRIPTION

The W39L040 is a 4Mbit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible

erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are

composed of 16 smaller even pages with 4 Kbytes. The byte-wide (× 8) data appears on DQ7 − DQ0.

The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt

VPP is not required. The unique cell architecture of the W39L040 results in fast program/erase

operations with extremely low current consumption (compared to other comparable 3.3-volt flash

memory products). The device can also be programmed and erased by using standard EPROM

programmers.

2. FEATURES

• Single 3.3-volt operations

− 3.3-volt Read

− 3.3-volt Erase

− 3.3-volt Program

• Fast Program operation:

− Byte-by-Byte programming: 50 µS (max.)

• Fast Erase operation:

− Chip Erase cycle time: 100 mS (max.)

− Sector Erase cycle time: 25 mS (max.)

− Page Erase cycle time: 25 mS (max.)

• Read access time: 70/90 nS

• Hardware protection:

− Optional 16K byte or 64K byte Top/Bottom

Boot Block with lockout protection

• Flexible 4K-page size can be used as

Parameter Blocks

• Typical program/erase cycles: 1K/10K

• Twenty-year data retention

• Low power consumption

− Active current: 10 mA (typ.)

− Standby current: 2 µA (typ.)

• End of program detection

− Software method: Toggle bit/Data polling

• TTL compatible I/O

• 8 Even sectors with 64K bytes each, which is

composed of 16 flexible pages with 4K bytes

• JEDEC standard byte-wide pinouts

• Any individual sector or page can be erased

• Available packages: 32L PLCC, 32L TSOP (8 x

20 mm) and 32L STSOP (8 x 14 mm)

Publication Release Date: February 10, 2003

- 1 -

Revision A3

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