Datasheet > W27E040

W27E040

更新时间： 2024-11-07 22:11:15

品牌	Logo	应用领域
华邦 - WINBOND		可编程只读存储器电动程控只读存储器
页数	文件大小	规格书
15页	175K
描述
512K X 8 ELECTRICALLY ERASABLE EPROM

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中文翻译

获取价格

数据手册

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W27E040 数据手册

W27E040

512K ´ 8 ELECTRICALLY ERASABLE EPROM

GENERAL DESCRIPTION

The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only

Memory organized as 524288 ´ 8 bits that operates on a single 5 volt power supply. The W27E040

provides an electrical chip erase function.

FEATURES

· High speed access time:

90/120 nS (max.)

· +14V erase/+12V programming voltage

· Fully static operation

· Read operating current: 15 mA (typ.)

· Erase/Programming operating current

15 mA (typ.)

· All inputs and outputs directly TTL/CMOS

compatible

· Three-state outputs

· Available packages: 32-pin 600 mil DIP, 450

mil SOP, PLCC and TSOP

· Standby current: 5 mA (typ.)

· Single 5V power supply

PIN CONFIGURATIONS

BLOCK DIAGRAM

V _PP

V_CC

A18

A16

A15

A12

A17

A14

A13

OUTPUT

CONTROL

DECODER

BUFFER

32-pin

DIP

A11

A10

CORE

ARRAY

A18

GND

32 31 30

A14

A13

32-pin

PLCC

A11

PIN DESCRIPTION

A10

SYMBOL

DESCRIPTION

14 15 16 17 18 19 20

Address Inputs

Data Inputs/Outputs

A0- A18

Q0- Q7

A11

A10

A13

Chip Enable

A14

A17

A18

Output Enable

VPP

VCC

GND

32-pin

TSOP

V_CC

V_PP

Program/Erase Supply Voltage

Power Supply

GND

A16

A15

A12

Ground

No Connection

Publication Release Date: May 1997

Revision A1

- 1 -

12 3 4 5 6 7...15

中文翻译

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