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W26A041B70LI PDF预览

W26A041B70LI

更新时间: 2024-11-10 15:57:51
品牌 Logo 应用领域
华邦 - WINBOND 静态存储器内存集成电路
页数 文件大小 规格书
11页 185K
描述
Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, TFBGA-48

W26A041B70LI 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA, BGA48,6X8,30针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:70 nsI/O 类型:COMMON
JESD-30 代码:R-PBGA-B48JESD-609代码:e1
长度:8 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:48
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:256KX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,30
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL电源:1.8 V
认证状态:Not Qualified座面最大高度:1.1 mm
最小待机电流:1.5 V子类别:SRAMs
最大压摆率:0.025 mA最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN SILVER COPPER
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM宽度:6 mm
Base Number Matches:1

W26A041B70LI 数据手册

 浏览型号W26A041B70LI的Datasheet PDF文件第2页浏览型号W26A041B70LI的Datasheet PDF文件第3页浏览型号W26A041B70LI的Datasheet PDF文件第4页浏览型号W26A041B70LI的Datasheet PDF文件第5页浏览型号W26A041B70LI的Datasheet PDF文件第6页浏览型号W26A041B70LI的Datasheet PDF文件第7页 
Preliminary W26A041  
´ 16 CMOS STATIC RAM  
256K  
GENERAL DESCRIPTION  
The W26A041 is a normal-speed, very low-power CMOS static RAM organized as 262144 x 16 bits  
that operates on a wide voltage range from 1.65V to 1.95V power supply. The W26A041, W26A041-LE  
and W26A041-LI, can meet the requirement of various operating temperature. This device is  
manufactured using Winbonds high performance CMOS technology.  
FEATURES  
· Low power consumption  
· Access time: 70 nS  
· 1.65V to 1.95V supply voltage  
· Fully static operation  
· Battery back-up operation capability  
· Data retention voltage: 1.5V (min.)  
· Data byte control  
-
#LB (I/O1 - I/O8), #UB (I/O9 - I/O16)  
· All inputs and outputs directly TTL compatible  
· Three-state outputs  
· Available packages: 44-pin type two TSOP,  
and TFBGA  
PIN CONFIGURATIONS  
BLOCK DIAGRAM  
PRECHARGE CKT.  
CLK GEN.  
A4  
A3  
A4  
A3  
A2  
A1  
A0  
#CS1  
I/O1  
I/O2  
I/O3  
1
2
3
4
A5  
A6  
A7  
#OE  
#UB  
#LB  
I/O16  
I/O15  
I/O14  
I/O13  
VSS  
A15  
44  
43  
R
O
W
A14  
A16  
CORE CELL ARRAY  
1024 ROWS  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
D
E
C
O
D
E
R
A1  
A2  
256 X 16 COLUMNS  
5
6
A17  
A0  
7
8
A13  
9
I/O1  
:
I/O16  
I/O CKT.  
COLUMN DECODER  
DATA  
CNTRL.  
I/O4  
10  
11  
12  
13  
14  
15  
16  
DD  
SS  
V
V
CLK  
GEN.  
VDD  
I/O5  
I/O6  
I/O12  
I/O1  
44-pin  
TSOP  
A7 A6 A5  
A9 A10 A11 A12  
A8  
#WE  
1
I/O7  
I/O8  
#WE  
A17  
A16  
A15  
I/O1  
#CS1  
CS2  
#UB  
0
I/O  
17  
18  
19  
20  
21  
22  
CS2  
A8  
A9  
A10  
A11  
#LB  
#OE  
A14  
A13  
PIN DESCRIPTION  
A12  
SYMBOL  
DESCRIPTION  
Address Inputs  
Data Inputs/Outputs  
A0 - A17  
I/O1 - I/O16  
#CS1  
CS2  
TFBGA TOP VIEW  
1
2
3
4
5
6
CS2  
I/O1  
Chip Select Input 1, Low Active  
Chip Select Input 2, High Active  
Write Enable Input  
Lower byte select  
Upper byte select  
Output Enable Input  
Power Supply  
A
#LB  
I/O9  
I/O10  
#OE  
#UB  
I/O11  
A0  
A3  
A5  
A17  
NC  
A14  
A2  
A1  
A4  
A6  
B
C
D
E
F
G
H
#CS1  
I/O2  
I/O4  
I/O5  
I/O6  
#WE  
I/O3  
VDD  
SS  
V
#WE  
A7  
A16  
SS  
I/O12  
I/O13  
I/O14  
NC  
V
#LB  
VDD  
I/O15  
#UB  
I/O7  
I/O8  
A15  
A13  
A10  
I/O16  
NC  
A12  
A9  
#OE  
NC  
A8  
A11  
VDD  
VSS  
Ground  
NC  
No Connection  
Publication Release Date: April 19, 2002  
Revision A1  
- 1 -  

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