5秒后页面跳转
VT4045BP-M3/4W PDF预览

VT4045BP-M3/4W

更新时间: 2024-11-06 08:17:51
品牌 Logo 应用领域
威世 - VISHAY 电池
页数 文件大小 规格书
4页 115K
描述
Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

VT4045BP-M3/4W 技术参数

生命周期:Active零件包装代码:TO-220AC
包装说明:R-PSFM-T2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.68
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.63 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2最大非重复峰值正向电流:240 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:40 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:45 V子类别:Rectifier Diodes
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VT4045BP-M3/4W 数据手册

 浏览型号VT4045BP-M3/4W的Datasheet PDF文件第2页浏览型号VT4045BP-M3/4W的Datasheet PDF文件第3页浏览型号VT4045BP-M3/4W的Datasheet PDF文件第4页 
VT4045BP  
Vishay General Semiconductor  
www.vishay.com  
Trench MOS Barrier Schottky Rectifier  
for PV Solar Cell Bypass Protection  
Ultra Low VF = 0.28 V at IF = 5 A  
FEATURES  
TMBS®  
TO-220AC  
• Trench MOS Schottky technology  
• Low forward voltage drop, low power losses  
• High efficiency operation  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Compliant to RoHS Directive 2011/65/EU  
Halogen-free according to IEC 61249-2-21 definition  
2
1
TYPICAL APPLICATIONS  
For use in solar cell junction box as a bypass diode for  
protection, using DC forward current without reverse bias.  
PIN 1  
PIN 2  
CASE  
MECHANICAL DATA  
Case: TO-220AC  
Molding compound meets UL 94 V-0 flammability rating  
PRIMARY CHARACTERISTCS  
IF(DC)  
40 A  
45 V  
Base P/N-M3  
commercial grade  
- halogen-free, RoHS compliant, and  
VRRM  
IFSM  
240 A  
0.51 V  
150 °C  
200 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
M3 suffix meets JESD 201 class 1A whisker test  
VF at IF = 40 A  
T
OP max. (AC mode)  
Polarity: As marked  
TJ max. (DC forward current)  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VT4045BP  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum DC forward bypassing current (fig. 1)  
VRRM  
45  
40  
V
A
(1)  
IF(DC)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
TOP  
240  
- 40 to + 150  
200  
A
Operating junction temperature range (AC mode)  
°C  
°C  
Junction temperature in DC forward current  
without reverse bias, t 1 h  
(2)  
TJ  
Notes  
(1)  
With heatsink  
(2)  
Meets the requirements of IEC 61215 ed.2 bypass diode thermal test  
Revision: 23-Feb-12  
Document Number: 89441  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与VT4045BP-M3/4W相关器件

型号 品牌 获取价格 描述 数据表
VT4045C VISHAY

获取价格

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VT4045CHM3 VISHAY

获取价格

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VT4045CHM3/4W VISHAY

获取价格

DIODE 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLA
VT4045C-M3 VISHAY

获取价格

Trench MOS Schottky technology
VT4045C-M3/4W VISHAY

获取价格

DIODE 20 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLA
VT4045C-M3_15 VISHAY

获取价格

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
VT4060C VISHAY

获取价格

Dual Trench MOS Barrier Schottky Rectifier
VT4060C-E3/4W VISHAY

获取价格

DIODE 20 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLA
VT4060C-E3-4W VISHAY

获取价格

Dual Trench MOS Barrier Schottky Rectifier
VT4060CHM3/4W VISHAY

获取价格

DIODE RECTIFIER DIODE, Rectifier Diode