VT40L45PW
Vishay General Semiconductor
www.vishay.com
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.27 V at IF = 5 A
FEATURES
TMBS®
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
TO-3PW
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
PIN 1
PIN 3
PIN 2
CASE
MECHANICAL DATA
Case: TO-3PW
Molding compound meets UL 94 V-0 flammability rating
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
45 V
VRRM
IFSM
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
280 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
VF at IF = 20 A (TA = 125 °C)
TJ max.
0.41 V
150 °C
TO-3PW
Package
Polarity: As marked
Diode variations
Dual common cathode
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT40L45PW
UNIT
Maximum repetitive peak reverse voltage
VRRM
45
40
20
V
per device
per diode
Maximum average forward rectified current (fig. 1)
IF(AV)
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
280
A
Operating junction and storage temperature range
TJ, TSTG
-40 to +150
°C
Revision: 08-Jan-13
Document Number: 89396
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000