Datasheet > VT30L60C-E3-4W

VT30L60C-E3-4W

更新时间： 2024-09-14 08:17:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	129K
描述
Dual Trench MOS Barrier Schottky Rectifier

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VT30L60C-E3-4W 数据手册

New Product

VT30L60C, VIT30L60C

Vishay General Semiconductor

Dual Trench MOS Barrier Schottky Rectifier

Ultra Low V_F= 0.32 V at I_F= 5.0 A

FEATURES

TMBS^®

• Trench MOS Schottky technology

TO-220AB

TO-262AA

• Low forward voltage drop, low power losses

• High efficiency operation

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

TYPICAL APPLICATIONS

VT30L60C

VIT30L60C

For use in high frequency converters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters, and reverse battery protection.

PIN 1

PIN 2

CASE

PIN 3

MECHANICAL DATA

Case: TO-220AB and TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, and commercial grade

PRIMARY CHARACTERISTICS

I_F(AV)

2 x 15 A

60 V

V_RRM

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test

I_FSM

200 A

0.45 V

150 °C

V_Fat I_F= 15 A

T_Jmax.

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT30L60C

VIT30L60C

UNIT

Maximum repetitive peak reverse voltage

V_RRM

per device

per diode

Maximum average forward rectified current

(fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

200

Voltage rate of change (rated V_R)

dV/dt

10 000

V/μs

°C

Operating junction and storage temperature range

T_J, T_STG

- 40 to + 150

Document Number: 89380

Revision: 07-Dec-10

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

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