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VSKL170-10

更新时间： 2024-11-08 14:23:23
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页数 文件大小 规格书
12页 313K
描述
Silicon Controlled Rectifier, 377A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 2 Element, ROHS COMPLIANT, MAGN-A-PAK-5

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VSKL170-10 技术参数

生命周期：Active包装说明：FLANGE MOUNT, R-PUFM-X5
针数：5Reach Compliance Code：unknown
HTS代码：8541.30.00.80风险等级：5.16
Is Samacsys：N外壳连接：ISOLATED
配置：SERIES CONNECTED, CENTER TAP, 2 ELEMENTS最大直流栅极触发电流：200 mA
JESD-30 代码：R-PUFM-X5元件数量：2
端子数量：5最高工作温度：130 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
认证状态：Not Qualified最大均方根通态电流：377 A
断态重复峰值电压：1000 V重复峰值反向电压：1000 V
表面贴装：NO端子形式：UNSPECIFIED
端子位置：UPPER触发设备类型：SCR
Base Number Matches：1

VSKL170-10 数据手册

 浏览型号VSKL170-10的Datasheet PDF文件第2页浏览型号VSKL170-10的Datasheet PDF文件第3页浏览型号VSKL170-10的Datasheet PDF文件第4页浏览型号VSKL170-10的Datasheet PDF文件第5页浏览型号VSKL170-10的Datasheet PDF文件第6页浏览型号VSKL170-10的Datasheet PDF文件第7页 
VSK.170PbF, VSK.250PbF Series  
www.vishay.com  
Vishay Semiconductors  
SCR/SCR and SCR/Diode  
(MAGN-A-PAK Power Modules), 170 A/250 A  
FEATURES  
• High voltage  
• Electrically isolated base plate  
• 3500 VRMS isolating voltage  
• Industrial standard package  
• Simplified mechanical designs, rapid assembly  
• High surge capability  
• Large creepage distances  
• UL approved file E78996  
• Designed and qualified for industrial level  
MAGN-A-PAK  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION  
This new VSK series of MAGN-A-PAK modules uses high  
voltage power thyristor/thyristor and thyristor/diode in  
seven basic configurations. The semiconductors are  
electrically isolated from the metal base, allowing common  
heatsinks and compact assemblies to be built. They can be  
interconnected to form single phase or three phase bridges  
or as AC-switches when modules are connected in  
anti-parallel mode. These modules are intended for general  
purpose applications such as battery chargers, welders,  
motor drives, UPS, etc.  
PRODUCT SUMMARY  
IT(AV)  
170 A/250 A  
Type  
Modules - Thyristor, Standard  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VSK.170..  
170  
VSK.250..  
250  
UNITS  
IT(AV)  
85 °C  
IT(RMS)  
377  
555  
A
50 Hz  
60 Hz  
50 Hz  
60 Hz  
5100  
8500  
ITSM  
5350  
8900  
131  
361  
I2t  
kA2s  
119  
330  
I2t  
1310  
3610  
kA2s  
V
VDRM/VRRM  
Up to 1600  
Up to 2000  
TJ  
Range  
- 40 to 130  
°C  
Revision: 02-Jul-10  
Document Number: 94417  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...12

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与VSKL170-10相关器件

型号 品牌 获取价格 描述 数据表
VSKL170-10PBF VISHAY

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 		Silicon Controlled Rectifier, 377A I(T)RMS, 170000mA I(T), 1000V V(DRM), 1000V V(RRM), 2 E
VSKL170-12 VISHAY

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 		Silicon Controlled Rectifier, 377A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 2 Element, ROHS CO
VSKL170-12PBF VISHAY

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 		Silicon Controlled Rectifier, 377A I(T)RMS, 170000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 E
VSKL170-14 VISHAY

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 		Silicon Controlled Rectifier, 377A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 2 Element, ROHS CO
VSKL170-14PBF VISHAY

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 		Silicon Controlled Rectifier, 377A I(T)RMS, 170000mA I(T), 1400V V(DRM), 1400V V(RRM), 2 E
VSKL170-16PBF VISHAY

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 		Silicon Controlled Rectifier, 377A I(T)RMS, 170000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 E
VSKL230-08 VISHAY

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 		Silicon Controlled Rectifier, 510A I(T)RMS, 230000mA I(T), 800V V(DRM), 800V V(RRM), 2 Ele
VSKL230-12 VISHAY

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 		Silicon Controlled Rectifier, 510A I(T)RMS, 230000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 E
VSKL230-12PBF VISHAY

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 		Silicon Controlled Rectifier, 510A I(T)RMS, 230000mA I(T), 1200V V(DRM), 1200V V(RRM), 2 E
VSKL230-16PBF VISHAY

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 		Silicon Controlled Rectifier, 510A I(T)RMS, 230000mA I(T), 1600V V(DRM), 1600V V(RRM), 2 E

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