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VSKKF200-12HJP PDF预览

VSKKF200-12HJP

更新时间: 2024-09-20 19:00:47
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页数 文件大小 规格书
11页 1314K
描述
Silicon Controlled Rectifier, 444A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, ROHS COMPLIANT, MAGN-A-PAK-5

VSKKF200-12HJP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-X5
针数:5Reach Compliance Code:compliant
HTS代码:8541.30.00.80风险等级:5.21
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最大直流栅极触发电流:200 mA
最大直流栅极触发电压:3 V快速连接描述:G-GR
螺丝端子的描述:2A-CK最大维持电流:6000 mA
JESD-30 代码:R-XUFM-X5最大漏电流:50 mA
通态非重复峰值电流:8000 A元件数量:1
端子数量:5最大通态电流:200000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:444 A
断态重复峰值电压:1200 V重复峰值反向电压:1200 V
子类别:Silicon Controlled Rectifiers表面贴装:NO
端子面层:Nickel (Ni)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

VSKKF200-12HJP 数据手册

 浏览型号VSKKF200-12HJP的Datasheet PDF文件第2页浏览型号VSKKF200-12HJP的Datasheet PDF文件第3页浏览型号VSKKF200-12HJP的Datasheet PDF文件第4页浏览型号VSKKF200-12HJP的Datasheet PDF文件第5页浏览型号VSKKF200-12HJP的Datasheet PDF文件第6页浏览型号VSKKF200-12HJP的Datasheet PDF文件第7页 
VSK.F200..P Series  
Vishay Semiconductors  
Fast Thyristor/Diode and Thyristor/Thyristor  
(MAGN-A-PAK Power Modules), 200 A  
FEATURES  
• Fast turn-off thyristor  
• Fast recovery diode  
• High surge capability  
• Electrically isolated baseplate  
• 3500 VRMS isolating voltage  
• Industrial standard package  
• UL approved file E78996  
• Compliant to RoHS directive 2002/95/EC  
• Designed and qualified for industrial level  
MAGN-A-PAK  
DESCRIPTION  
PRODUCT SUMMARY  
This series of MAGN-A-PAK modules are intended for  
applications such as self-commutated inverters, DC  
choppers, electronic welders, induction heating and others  
where fast switching characteristics are required.  
IT(AV)  
200 A  
Type  
Modules - Thyristor, Fast  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
200  
UNITS  
A
IT(AV)  
TC  
85  
°C  
IT(RMS)  
ITSM  
444  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
7600  
8000  
290  
A
I2t  
kA2s  
kA2s  
μs  
265  
I2t  
tq  
2900  
20/25  
2
trr  
V
DRM/VRRM  
800/1200  
- 40 to 125  
V
TJ  
Range  
°C  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
V
RRM/VDRM, MAXIMUM REPETITIVE  
V
RSM, MAXIMUM NON-REPETITIVE  
IRRM/IDRM  
AT TJ = 125 °C  
mA  
VOLTAGE  
CODE  
PEAK REVERSE AND OFF-STATE  
TYPE NUMBER  
PEAK REVERSE VOLTAGE  
V
BLOCKING VOLTAGE  
V
08  
12  
800  
800  
VSK.F200-  
50  
1200  
1200  
Document Number: 94422  
Revision: 19-Jul-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1

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