Datasheet > VS-C4PU6006LHN3

VS-C4PU6006LHN3

更新时间： 2024-11-20 22:51:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	162K
描述
DIODE GEN PURP 600V 30A TO247AD

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VS-C4PU6006LHN3 数据手册

VS-C4PU6006LHN3

Vishay Semiconductors

www.vishay.com

Ultrafast Soft Recovery Diode,

2 x 30 A FRED Pt^®Gen 4

FEATURES

• Gen 4 FRED Pt^®technology

Base

common

cathode

• Low I_RRMand reverse recovery charge

• Very low forward voltage drop

• Polyimide passivated chip for high reliability

standard

• 175 °C operating junction temperature

• AEC-Q101 qualified, meets JESD 201 class 1A whisker

test

TO-247AD 3L

Anode

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Common

cathode

PRIMARY CHARACTERISTICS

DESCRIPTION

I_F(AV)

2 x 30 A

Gen 4 Fred technology, state of the art, ultralow V_F, soft

switching optimized for Discontinuous (Critical) Mode (DCM)

and IGBT F/W diode.

The minimized conduction loss, optimized stored charge

and low recovery current minimize the switching losses and

reduce power dissipation in the switching element and

snubbers.

V_R

600 V

V_Fat I_F

1.19 V

_rrtyp.

See Recovery table

175 °C

T_Jmax.

Package

TO-247AD 3L

Common cathode

Circuit configuration



ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

MAX.

600

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current, per leg

Operating junction and storage temperature

I_F(AV)

T_C= 131 °C

T_C= 25 °C, t_p= 8.3 ms, half sine wave

I_FSM

240

T_J, T_Stg

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

600

TYP.

MAX. UNITS

Breakdown voltage, blocking voltage

V_BR, V_R

I_R= 100 μA

1.6

I_F= 30 A

1.36

1.6

1.23

1.5

1.19

1.48

I_F= 60 A

I_F= 30 A, T_J= 125 °C

I_F= 60 A, T_J= 125 °C

I_F= 30 A, T_J= 150 °C

I_F= 60 A, T_J= 150 °C

V_R= V_Rrated

Forward voltage

V_F

1.35

500

Reverse leakage current

Junction capacitance

I_R

μA

T_J= 125 °C, V_R= V_Rrated

V_R= 600 V

C_T

18.3

Revision: 25-Oct-2018

Document Number: 95950

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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与VS-C4PU6006LHN3相关器件

型号	品牌	获取价格	描述	数据表
VS-C4PU6006L-N3	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 2 x 30 A FRED Pt? Gen 4
VS-C4ZU3006FP-M3	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 2 x 15 A FRED Pt? Gen 4
VS-C4ZU6006FP-M3	VISHAY	获取价格	Ultrafast Soft Recovery Diode, 2 x 30 A FRED Pt? Gen 4
VSC5529	VITESSE	获取价格	9.9 Gb/s - 12.5 Gb/s NRZ LiNbO3 Modulator Driver
VSC5529MM-03	MICROSEMI	获取价格	Interface Circuit,
VSC5529MM-04	MICROSEMI	获取价格	Interface Circuit,
VSC5531	VITESSE	获取价格	10 GHz to 12.5 GHz Clock Driver
VS-C5PH3006L-N3	VISHAY	获取价格	Hyperfast Rectifier, 2 x 15 A FRED Pt? G5
VS-C5PH3012LHN3	VISHAY	获取价格	Hyperfast Rectifier, 2 x 15 A FRED Pt? G5
VS-C5PH3012L-N3	VISHAY	获取价格	Hyperfast Rectifier, 2 x 15 A FRED Pt? G5

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