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VS-C4ZU6006FP-M3 PDF预览

VS-C4ZU6006FP-M3

更新时间: 2024-11-21 14:53:47
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威世 - VISHAY /
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5页 109K
描述
Ultrafast Soft Recovery Diode, 2 x 30 A FRED Pt? Gen 4

VS-C4ZU6006FP-M3 数据手册

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VS-C4ZU6006FP-M3  
Vishay Semiconductors  
www.vishay.com  
Ultrafast Soft Recovery Diode,  
2 x 30 A FRED Pt® Gen 4  
FEATURES  
• Gen 4 FRED Pt technology  
• Low IRRM and reverse recovery charge  
• Very low forward voltage drop  
2
Common  
• Polyimide passivated chip for high reliability  
standard  
cathode  
1
3
Anode  
Anode  
• Fully isolated package (VINS = 2500 VRMS  
)
1
2
TO-3PF  
3
• 175 °C operating junction temperature  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
DESCRIPTION  
IF(AV) per leg  
30 A  
600 V  
Gen 4 Fred Pt technology, state of the art, ultralow VF, soft  
switching optimized for Discontinuous (Critical) Mode (DCM)  
and IGBT F/W diode.  
The minimized conduction loss, optimized stored charge  
and low recovery current minimize the switching losses and  
reduce over dissipation in the switching element and  
snubbers.  
VR  
VF at IF  
1.20 V  
37 ns  
t
rr typ.  
TJ max.  
Package  
175 °C  
TO-3PF  
Circuit configuration  
Common cathode  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
MAX.  
600  
UNITS  
Peak repetitive reverse voltage  
V
Average rectified forward current, per leg  
Non-repetitive peak surge current, per leg  
Operating junction and storage temperature  
IF(AV)  
TC = 75 °C  
TC = 25 °C, tp = 8.3 ms half sine wave  
30  
A
IFSM  
255  
TJ, TStg  
-55 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
600  
TYP.  
MAX. UNITS  
Breakdown voltage, blocking voltage  
VBR, VR  
IR = 100 μA  
-
-
IF = 30 A  
-
-
-
-
-
-
-
1.4  
1.56  
1.20  
1.43  
-
1.65  
IF = 50 A  
1.97  
1.45  
-
V
Forward voltage  
VF  
IF = 30 A, TJ = 150 °C  
IF = 50 A, TJ = 150 °C  
VR = VR rated  
50  
Reverse leakage current  
Junction capacitance  
IR  
μA  
pF  
TJ = 125 °C, VR = VR rated  
VR = 600 V  
-
500  
-
CT  
19  
Revision: 14-Apr-2020  
Document Number: 96687  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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