Datasheet > VS-32CTQ025PBF

VS-32CTQ025PBF

更新时间： 2024-11-08 01:08:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	158K
描述
Schottky Rectifier

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中文翻译

获取价格

数据手册

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VS-32CTQ025PBF 数据手册

VS-32CTQ025PbF, VS-32CTQ025-N3, VS-32CTQ030PbF, VS-32CTQ030-N3

www.vishay.com

Vishay Semiconductors

Schottky Rectifier, 2 x 15 A

FEATURES

Base

common

cathode

• 150 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• High

purity,

high

temperature

epoxy

encapsulation for enhanced mechanical strength

and moisture resistance

Anode

Common

cathode

TO-220AB

• Guard ring for enhanced ruggedness and long

term reliability

• Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

• Designed and qualified according to JEDEC-JESD47

Package

TO-220AB

2 x 15 A

25 V, 30 V

0.40 V

• Halogen-free according to IEC 61249-2-21 definition

(-N3 only)

I_F(AV)

V_R

DESCRIPTION

V_Fat I_F

The VS-32CTQ... Schottky rectifier series has been

optimized for low reverse leakage at high temperature. The

proprietary barrier technology allows for reliable operation up

to 150 °C junction temperature. Typical applications are in

switching power supplies, converters, freewheeling diodes,

and reverse battery protection.

_RMmax.

97 mA at 125 °C

150 °C

T_Jmax.

Diode variation

E_AS

Common cathode

13 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

25/30

900

t_p= 5 μs sine

15 A_pk, T_J= 125 °C

Range

V_F

0.40

T_J

- 55 to 150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL VS-32CTQ025PbF VS-32CTQ025-N3 VS-32CTQ030PbF VS-32CTQ030-N3 UNITS

Maximum DC reverse voltage

V_R

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

See fig. 5

I_F(AV)

50 % duty cycle at T_C= 115 °C, rectangular waveform

Maximum peak one cycle

non-repetitive surge current

See fig. 7

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse

900

Following any rated load

condition and with rated

V_RRMapplied

I_FSM

250

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 1.20 A, L = 11.10 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Revision: 11-Oct-11

Document Number: 94202

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

中文翻译

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与VS-32CTQ025PBF相关器件

型号	品牌	获取价格	描述	数据表
VS-32CTQ025SHM3	VISHAY	获取价格	DIODE SCHOTTKY 25V 15A D2PAK
VS-32CTQ025S-M3	VISHAY	获取价格	High frequency operation
VS-32CTQ025STRLHM3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 25V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-32CTQ025STRL-M3	VISHAY	获取价格	High frequency operation
VS-32CTQ025STRLPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 25V V(RRM), Silicon, HALOGEN FREE AND
VS-32CTQ025STRRHM3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 25V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-32CTQ025STRR-M3	VISHAY	获取价格	High frequency operation
VS-32CTQ025STRRPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 25V V(RRM), Silicon, HALOGEN FREE AND
VS-32CTQ030-1HM3	VISHAY	获取价格	High frequency operation
VS-32CTQ030-1-M3	VISHAY	获取价格	DIODE SCHOTTKY 30V 15A TO262AA

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