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VS-32CTQ030STRL-M3 PDF预览

VS-32CTQ030STRL-M3

更新时间: 2024-01-16 13:02:22
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
10页 255K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 30V V(RRM), Silicon, TO-263AB, D2PAK-3/2

VS-32CTQ030STRL-M3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSSO-G2Reach Compliance Code:unknown
ECCN代码:EAR99Factory Lead Time:26 weeks
风险等级:5.67其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.58 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:250 A元件数量:2
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:30 V最大反向电流:1750 µA
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-32CTQ030STRL-M3 数据手册

 浏览型号VS-32CTQ030STRL-M3的Datasheet PDF文件第2页浏览型号VS-32CTQ030STRL-M3的Datasheet PDF文件第3页浏览型号VS-32CTQ030STRL-M3的Datasheet PDF文件第4页浏览型号VS-32CTQ030STRL-M3的Datasheet PDF文件第5页浏览型号VS-32CTQ030STRL-M3的Datasheet PDF文件第6页浏览型号VS-32CTQ030STRL-M3的Datasheet PDF文件第7页 
VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 15 A  
FEATURES  
• 150 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
2
1
encapsulation for enhanced mechanical  
strength and moisture resistance  
1
3
2
D2PAK (TO-263AB)  
3
TO-262AA  
• Guard ring for enhanced ruggedness and long term  
reliability  
Base  
common  
cathode  
Base  
common  
cathode  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C  
2
2
• Designed and qualified according to JEDEC®-JESD 47  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
DESCRIPTION  
The VS-32CTQ... Schottky rectifier series has been  
optimized for low reverse leakage at high temperature. The  
VS-32CTQ...S-M3  
VS-32CTQ...-1-M3  
proprietary barrier technology allows for reliable operation  
up to 150 °C junction temperature. Typical applications are  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 15 A  
25 V, 30 V  
0.40 V  
in switching power supplies, converters, freewheeling  
diodes, and reverse battery protection.  
VR  
VF at IF  
I
RM max.  
97 mA at 125°C  
150 °C  
TJ max.  
EAS  
13 mJ  
Package  
D2PAK (TO-263AB), TO-262AA  
Circuit configuration  
Common cathode  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
30  
UNITS  
Rectangular waveform  
A
V
25, 30  
900  
tp = 5 μs sine  
15 Apk, TJ = 125 °C  
Range  
A
VF  
0.40  
V
TJ  
-55 to +150  
°C  
VOLTAGE RATINGS  
VS-32CTQ025S-M3 VS-32CTQ030S-M3  
VS-32CTQ025-1-M3 VS-32CTQ030-1-M3  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
25  
30  
V
Maximum working peak reverse voltage  
VRWM  
Revision: 27-Oct-17  
Document Number: 94936  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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