Datasheet > VS-20MQ100HM3

VS-20MQ100HM3

更新时间： 2023-12-06 20:10:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	127K
描述
High Performance Schottky Rectifier, 2 A

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VS-20MQ100HM3 数据手册

VS-20MQ100HM3

Vishay Semiconductors

www.vishay.com

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

0.91

0.85

0.78

0.72

0.68

0.63

0.1

UNITS

2 A

1.5 A

T_J= 25 °C

1 A

Maximum forward voltage drop

See fig. 1

(1)

V_FM

2 A

1.5 A

1 A

T_J= 125 °C

T_J= 25 °C

T_J= 125 °C

Maximum reverse leakage current

See fig. 2

I_RM

V_R= Rated V_R

Threshold voltage

V_F(TO)

r_t

0.52

78.4

T_J= T_Jmaximum

Forward slope resistance

Typical junction capacitance

Typical series inductance

Maximum voltage rate of change

mΩ

C_T

V_R= 10 V_DC, T_J= 25 °C, test signal = 1 MHz

Measured lead to lead 5 mm from package body

Rated V_R

L_S

2.0

dV/dt

10 000

V/μs

Note

(1)

Pulse width = 300 μs, duty cycle = 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and

storage temperature range

T_J⁽¹⁾, T_Stg

-55 to +150

°C

Maximum thermal resistance,

junction to ambient

R_thJA

DC operation

°C/W

0.07

Approximate weight

0.002

oz.

Marking device

Case style SMA (DO-214AC) (similar D-64)

Note

dP_tot

(1)

------------- < ------------- thermal runaway condition for a diode on its own heatsink

dT_JR_thJA

Revision: 21-Apr-2023

Document Number: 94840

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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