VS-20MT120PFP
Vishay Semiconductors
www.vishay.com
“Full Bridge” IGBT MTP (TrenchStop IGBT), 57 A
FEATURES
• Trench and Field Stop IGBT technology
• Positive VCE(on) temperature coefficient
• 10 μs short circuit capability
• HEXFRED® antiparallel diodes with ultrasoft
reverse recovery
• Low diode VF
• Square RBSOA
• Aluminum nitride DBC
• Very low stray inductance design for high speed operation
MTP
• UL approved file E78996
(Package example)
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
PRIMARY CHARACTERISTICS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
VCES
1200 V
57 A
I
C at TC = 25 °C
VCE(on)
1.84 V
Speed
8 kHz to 30 kHz
MTP
Package
Circuit configuration
Full bridge
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
1200
57
UNITS
Collector to emitter breakdown voltage
VCES
V
TC = 25 °C
C = 80 °C
Continuous collector current
IC
T
42
Pulsed collector current
ICM
ILM
TJ = 150 °C, tp = 6 ms, VGE = 15 V
50
A
Clamped inductive load current
Diode continuous forward current
Diode maximum forward current
Gate to emitter voltage
75
IF
TC = 106 °C
25
IFM
100
20
VGE
VISOL
V
RMS isolation voltage
Any terminal to case, t = 1 min
TC = 25 °C
2500
240
134
Maximum power dissipation (only IGBT)
PD
W
TC = 80 °C
Revision: 26-Jul-2021
Document Number: 96725
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000