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VS-20MT120PFP PDF预览

VS-20MT120PFP

更新时间: 2024-11-15 14:53:55
品牌 Logo 应用领域
威世 - VISHAY 双极性晶体管
页数 文件大小 规格书
10页 214K
描述
“Full Bridge” IGBT MTP (TrenchStop IGBT), 57 A

VS-20MT120PFP 数据手册

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VS-20MT120PFP  
Vishay Semiconductors  
www.vishay.com  
“Full Bridge” IGBT MTP (TrenchStop IGBT), 57 A  
FEATURES  
• Trench and Field Stop IGBT technology  
• Positive VCE(on) temperature coefficient  
• 10 μs short circuit capability  
• HEXFRED® antiparallel diodes with ultrasoft  
reverse recovery  
• Low diode VF  
• Square RBSOA  
• Aluminum nitride DBC  
• Very low stray inductance design for high speed operation  
MTP  
• UL approved file E78996  
(Package example)  
• Designed and qualified for industrial level  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
BENEFITS  
PRIMARY CHARACTERISTICS  
• Optimized for welding, UPS and SMPS applications  
• Rugged with ultrafast performance  
• Outstanding ZVS and hard switching operation  
• Low EMI, requires less snubbing  
• Excellent current sharing in parallel operation  
• Direct mounting to heatsink  
VCES  
1200 V  
57 A  
I
C at TC = 25 °C  
VCE(on)  
1.84 V  
Speed  
8 kHz to 30 kHz  
MTP  
Package  
Circuit configuration  
Full bridge  
• PCB solderable terminals  
• Very low junction to case thermal resistance  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
1200  
57  
UNITS  
Collector to emitter breakdown voltage  
VCES  
V
TC = 25 °C  
C = 80 °C  
Continuous collector current  
IC  
T
42  
Pulsed collector current  
ICM  
ILM  
TJ = 150 °C, tp = 6 ms, VGE = 15 V  
50  
A
Clamped inductive load current  
Diode continuous forward current  
Diode maximum forward current  
Gate to emitter voltage  
75  
IF  
TC = 106 °C  
25  
IFM  
100  
20  
VGE  
VISOL  
V
RMS isolation voltage  
Any terminal to case, t = 1 min  
TC = 25 °C  
2500  
240  
134  
Maximum power dissipation (only IGBT)  
PD  
W
TC = 80 °C  
Revision: 26-Jul-2021  
Document Number: 96725  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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