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VS-20ETF10SPBF PDF预览

VS-20ETF10SPBF

更新时间: 2024-11-21 14:45:35
品牌 Logo 应用领域
威世 - VISHAY 软恢复二极管快速软恢复二极管
页数 文件大小 规格书
8页 235K
描述
Rectifier Diode, 1 Phase, 1 Element, 20A, 1000V V(RRM), Silicon, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2

VS-20ETF10SPBF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:R-PSSO-G2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.67
Is Samacsys:N其他特性:FREE WHEELING DIODE
应用:FAST SOFT RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.31 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:355 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大重复峰值反向电压:1000 V
最大反向电流:100 µA最大反向恢复时间:0.4 µs
表面贴装:YES端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

VS-20ETF10SPBF 数据手册

 浏览型号VS-20ETF10SPBF的Datasheet PDF文件第2页浏览型号VS-20ETF10SPBF的Datasheet PDF文件第3页浏览型号VS-20ETF10SPBF的Datasheet PDF文件第4页浏览型号VS-20ETF10SPBF的Datasheet PDF文件第5页浏览型号VS-20ETF10SPBF的Datasheet PDF文件第6页浏览型号VS-20ETF10SPBF的Datasheet PDF文件第7页 
VS-20ETF..SPbF Series  
www.vishay.com  
Vishay Semiconductors  
Surface Mount Fast Soft Recovery Rectifier Diode, 20 A  
FEATURES  
• Designed  
JEDEC®-JESD47  
• Material categorization:  
and  
qualified  
according  
to  
Base  
Available  
cathode  
+
2
For definitions of compliance please see  
www.vishay.com/doc?99912  
2
APPLICATIONS  
3
1
3
1
• Output rectification and freewheeling in  
inverters, choppers and converters  
-
-
Anode  
Anode  
TO-263AB (D2PAK)  
• Input rectifications where severe restrictions on  
conducted EMI should be met  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK)  
DESCRIPTION  
IF(AV)  
20 A  
800 V, 1000 V, 1200 V  
1.31 V  
The VS-20ETF..SPbF soft recovery rectifier series has been  
optimized for combined short reverse recovery time and low  
forward voltage drop.  
VR  
VF at IF  
IFSM  
355 A  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
trr  
95 ns  
TJ max.  
Diode variation  
Snap factor  
150 °C  
Single die  
0.6  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
VF  
CHARACTERISTICS  
VALUES  
20  
UNITS  
Sinusoidal waveform  
A
V
800 to 1200  
355  
A
20 A, TJ = 25 °C  
1 A, 100 A/μs  
Range  
1.31  
V
trr  
95  
ns  
°C  
TJ  
-40 to 150  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
20ETF08SPbF  
20ETF10SPbF  
20ETF12SPbF  
800  
1000  
1200  
900  
1100  
1300  
6
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
20  
UNITS  
Maximum average forward current  
IF(AV)  
TC = 97 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
300  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
355  
450  
Maximum I2t for fusing  
I2t  
A2s  
635  
Maximum I2t for fusing  
I2t  
6350  
A2s  
Revision: 18-Dec-13  
Document Number: 94099  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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