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VS-20ETF10FPPbF

更新时间： 2024-09-27 01:20:59
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 222K
描述
Fast Soft Recovery Rectifier Diode, 20 A

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VS-20ETF10FPPbF 数据手册

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VS-20ETF...FPPbF Series, VS-20ETF...FP-M3 Series  
www.vishay.com  
Vishay Semiconductors  
Fast Soft Recovery Rectifier Diode, 20 A  
FEATURES  
• Glass passivated pellet chip junction  
• 150 °C max. operation junction temperature  
2
• Designed and qualified according to  
JEDEC®-JESD 47  
2
1
3
• Fully isolated package (VINS = 2500 VRMS  
)
3
1
• UL E78996 approved  
Cathode  
TO-220 FULL-PAK  
Anode  
Available  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
APPLICATIONS  
PRODUCT SUMMARY  
These devices are intended for use in output rectification  
and freewheeling in inverters, choppers and converters as  
well as in input rectification where severe restrictions on  
conducted EMI should be met.  
Package  
TO-220FP  
20 A  
IF(AV)  
VR  
1000 V, 1200 V  
1.31 V  
VF at IF  
IFSM  
320 A  
DESCRIPTION  
trr  
95 ns  
The VS-20ETF...FP... fast soft recovery rectifier series has  
been optimized for combined short reverse recovery time  
and low forward voltage drop.   
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
TJ max.  
Diode variation  
Snap factor  
150 °C  
Single die  
0.6  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
VRRM  
IF(AV)  
IFSM  
trr  
CHARACTERISTICS  
VALUES  
1000 to 1200  
20  
UNITS  
V
Sinusoidal waveform  
A
320  
1 A, 100 A/μs  
20 A, TJ = 25 °C  
Range  
95  
ns  
V
VF  
1.31  
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK VRSM, MAXIMUM NON-REPETITIVE PEAK  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
REVERSE VOLTAGE  
V
REVERSE VOLTAGE  
V
VS-20ETF10FPPbF, VS-20ETF10FP-M3  
VS-20ETF12FPPbF, VS-20ETF12FP-M3  
1000  
1200  
1100  
1300  
6
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
20  
UNITS  
Maximum average forward current  
IF(AV)  
TC = 50 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
270  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
320  
365  
Maximum I2t for fusing  
I2t  
A2s  
515  
Maximum I2t for fusing  
I2t  
5150  
A2s  
Revision: 11-Feb-16  
Document Number: 93222  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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VS-20ETF10FPPbF 替代型号

型号 品牌 替代类型 描述 数据表
20ETF10FP VISHAY

完全替代

 Fast Soft Recovery Rectifier Diode, 20 A

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