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VS-20ETF06STRRPBF PDF预览

VS-20ETF06STRRPBF

更新时间: 2024-11-21 15:57:39
品牌 Logo 应用领域
威世 - VISHAY 快速软恢复高电源软恢复二极管快速软恢复二极管高功率电源
页数 文件大小 规格书
8页 338K
描述
Rectifier Diode, 1 Phase, 1 Element, 20A, 600V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMD-220, D2PAK-3

VS-20ETF06STRRPBF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:HALOGEN FREE AND ROHS COMPLIANT, SMD-220, D2PAK-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:7.88
Is Samacsys:N其他特性:FREEWHEELING DIODE
应用:FAST SOFT RECOVERY HIGH POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:300 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.16 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:MATTE TIN OVER NICKEL
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

VS-20ETF06STRRPBF 数据手册

 浏览型号VS-20ETF06STRRPBF的Datasheet PDF文件第2页浏览型号VS-20ETF06STRRPBF的Datasheet PDF文件第3页浏览型号VS-20ETF06STRRPBF的Datasheet PDF文件第4页浏览型号VS-20ETF06STRRPBF的Datasheet PDF文件第5页浏览型号VS-20ETF06STRRPBF的Datasheet PDF文件第6页浏览型号VS-20ETF06STRRPBF的Datasheet PDF文件第7页 
VS-20ETF..SPbF Series  
www.vishay.com  
Vishay Semiconductors  
Surface Mount Fast Soft Recovery Rectifier Diode, 20 A  
FEATURES  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
Base  
cathode  
• Designed  
and  
qualified  
according  
to  
+
JEDEC®-JESD47  
2
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
2
3
1
1
3
APPLICATIONS  
• Output rectification and freewheeling in inverters,  
choppers and converters  
TO-263AB (D2PAK)  
-
-
Anode  
Anode  
• Input rectifications where severe restrictions on  
conducted EMI should be met  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK)  
IF(AV)  
20 A  
200 V, 400 V, 600 V  
1.3 V  
DESCRIPTION  
VR  
The VS-20ETF..SPbF soft recovery rectifier series has been  
optimized for combined short reverse recovery time and low  
forward voltage drop.  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
VF at IF  
IFSM  
300 A  
trr  
60 ns  
TJ max.  
Diode variation  
Snap factor  
150 °C  
Single die  
0.6  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
VF  
CHARACTERISTICS  
VALUES  
20  
UNITS  
Sinusoidal waveform  
A
V
200 to 600  
300  
A
10 A, TJ = 25 °C  
1 A, 100 A/μs  
Range  
1.2  
V
trr  
60  
ns  
°C  
TJ  
-40 to 150  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
VS-20ETF02SPbF  
VS-20ETF04SPbF  
VS-20ETF06SPbF  
200  
400  
600  
300  
500  
700  
5
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 97 °C, 180° conduction half sine wave  
VALUES  
20  
UNITS  
Maximum average forward current  
IF(AV)  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
250  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
300  
316  
Maximum I2t for fusing  
I2t  
A2s  
442  
Maximum I2t for fusing  
I2t  
4420  
A2s  
Revision: 18-Dec-13  
Document Number: 94097  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

VS-20ETF06STRRPBF 替代型号

型号 品牌 替代类型 描述 数据表
VS-20ETF06STRLPBF VISHAY

完全替代

Rectifier Diode, 1 Phase, 1 Element, 20A, 600V V(RRM), Silicon, HALOGEN FREE AND ROHS COMP

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