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VS-20ETF08S-M3 PDF预览

VS-20ETF08S-M3

更新时间: 2024-11-21 15:57:39
品牌 Logo 应用领域
威世 - VISHAY 软恢复二极管快速软恢复二极管
页数 文件大小 规格书
12页 332K
描述
Rectifier Diode, 1 Phase, 1 Element, 20A, 800V V(RRM), Silicon, TO-263AB, D2PAK-3/2

VS-20ETF08S-M3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:16 weeks风险等级:5.68
其他特性:FREE WHEELING DIODE应用:FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.31 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:355 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
最大重复峰值反向电压:800 V最大反向电流:100 µA
最大反向恢复时间:0.4 µs表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
Base Number Matches:1

VS-20ETF08S-M3 数据手册

 浏览型号VS-20ETF08S-M3的Datasheet PDF文件第2页浏览型号VS-20ETF08S-M3的Datasheet PDF文件第3页浏览型号VS-20ETF08S-M3的Datasheet PDF文件第4页浏览型号VS-20ETF08S-M3的Datasheet PDF文件第5页浏览型号VS-20ETF08S-M3的Datasheet PDF文件第6页浏览型号VS-20ETF08S-M3的Datasheet PDF文件第7页 
VS-20ETF08S-M3, VS-20ETF10S-M3, VS-20ETF12S-M3  
www.vishay.com  
Vishay Semiconductors  
Surface Mount Fast Soft Recovery Rectifier Diode, 20 A  
FEATURES  
Base  
• Glass passivated pellet chip junction  
cathode  
+
• Designed and qualified according to  
JEDEC®-JESD 47  
2
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 245 °C  
2
1
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
1
3
3
-
-
Anode  
Anode  
D2PAK (TO-263AB)  
APPLICATIONS  
• Output rectification and freewheeling in inverters,  
choppers and converters  
PRIMARY CHARACTERISTICS  
• Input rectifications where severe restrictions on  
conducted EMI should be met  
IF(AV)  
20 A  
VR  
VF at IF  
800 V, 1000 V, 1200 V  
1.31 V  
355 A  
DESCRIPTION  
IFSM  
The VS-20ETF..S-M3 soft recovery rectifier series has been  
optimized for combined short reverse recovery time and low  
forward voltage drop.  
trr  
95 ns  
TJ max.  
150 °C  
Snap factor  
Package  
Circuit configuration  
0.6  
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
D2PAK (TO-263AB)  
Single  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
VF  
CHARACTERISTICS  
VALUES  
20  
UNITS  
Sinusoidal waveform  
A
V
800 to 1200  
355  
A
20 A, TJ = 25 °C  
1 A, 100 A/μs  
Range  
1.31  
V
trr  
95  
ns  
°C  
TJ  
-40 to +150  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
20ETF08S-M3  
20ETF10S-M3  
20ETF12S-M3  
800  
1000  
1200  
900  
1100  
1300  
6
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 97 °C, 180° conduction half sine wave  
VALUES  
20  
UNITS  
Maximum average forward current  
IF(AV)  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
300  
A
Maximum peak one cycle  
IFSM  
non-repetitive surge current  
355  
450  
Maximum I2t for fusing  
I2t  
A2s  
635  
Maximum I2t for fusing  
I2t  
6350  
A2s  
Revision: 04-Jan-18  
Document Number: 94887  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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