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VS-15TQ060STRRPBF PDF预览

VS-15TQ060STRRPBF

更新时间: 2024-11-01 21:14:47
品牌 Logo 应用领域
威世 - VISHAY 高功率电源二极管
页数 文件大小 规格书
8页 871K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 60V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3

VS-15TQ060STRRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-263
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.63其他特性:FREEWHEELING DIODE, HIGH RELIABILITY
应用:HIGH POWER外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.56 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:1000 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:60 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:MATTE TIN (SN) - WITH NICKEL (NI) BARRIER
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:10Base Number Matches:1

VS-15TQ060STRRPBF 数据手册

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VS-15TQ060SPbF  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 15 A  
FEATURES  
Base  
cathode  
2
• 150 °C TJ operation  
• Very low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
3
1
• Guard ring for enhanced ruggedness and long  
term reliability  
N/C  
Anode  
D2PAK  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
PRODUCT SUMMARY  
• AEC-Q101 qualified  
Package  
D2PAK  
15 A  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
VR  
60 V  
DESCRIPTION  
VF at IF  
0.56 V  
The VS-15TQ060SPbF Schottky rectifier has been  
optimized for very low forward voltage drop, with moderate  
leakage. The proprietary barrier technology allows for  
reliable operation up to 150 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
freewheeling diodes, and reverse battery protection.  
I
RM max.  
45 mA at 125 °C  
150 °C  
TJ max.  
Diode variation  
EAS  
Single die  
6 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
15  
UNITS  
Rectangular waveform  
A
V
60  
tp = 5 μs sine  
15 Apk, TJ = 125 °C  
Range  
1000  
A
VF  
0.56  
V
TJ  
-55 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-15TQ060SPbF  
UNITS  
Maximum DC reverse voltage  
VR  
60  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 104 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
15  
A
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
1000  
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated  
load condition and with  
rated VRRM applied  
IFSM  
A
260  
6
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 1.5 A, L = 11.5 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.50  
Revision: 22-Apr-14  
Document Number: 94143  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

VS-15TQ060STRRPBF 替代型号

型号 品牌 替代类型 描述 数据表
VS-15TQ060STRLPBF VISHAY

完全替代

Rectifier Diode, Schottky, 1 Phase, 1 Element, 15A, 60V V(RRM), Silicon, HALOGEN FREE AND
VS-15TQ060SPBF VISHAY

完全替代

Schottky Rectifier, 15 A

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