VS-16CDH02HM3
Vishay Semiconductors
www.vishay.com
Hyperfast Rectifier, 2 x 8 A FRED Pt®
FEATURES
• Hyperfast recovery time, reduced Qrr, and
soft recovery
eSMP® Series
SMPD (TO-263AC)
• 175 °C maximum operating junction
temperature
K
• Specified for output and snubber operation
• Low forward voltage drop
1
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
2
Top View
Bottom View
Anode 1
Anode 2
K
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
LINKS TO ADDITIONAL RESOURCES
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
3
D
3D Models
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, telecom, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 8 A
200 V
0.77 V
27 ns
VR
VF at IF
trr
TJ max.
175 °C
Package
SMPD (TO-263AC)
Common cathode
Circuit configuration
MECHANICAL DATA
Case: SMPD (TO-263AC)
Molding compound meets UL 94 V-0 flammability rating
Halogen-free, RoHS-compliant
Terminals: matte tin plated leads, solderable per
J-STD-002
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
200
16
UNITS
Peak repetitive reverse voltage
VRRM
V
per device
Average rectified forward current
Non-repetitive peak surge current
IF(AV)
IFSM
Tsolder pad = 155 °C
TJ = 25 °C, 6 ms square pulse
per diode
per device
per diode
8
A
190
100
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
-
MAX.
-
UNITS
Breakdown voltage, blocking voltage
V
BR, VR
IR = 100 μA
200
IF = 8 A
-
-
-
-
-
0.93
0.77
-
1.03
0.87
2
V
Forward voltage, per diode
VF
IF = 8 A, TJ = 150 °C
VR = VR rated
Reverse leakage current, per diode
Junction capacitance, per diode
IR
μA
pF
TJ = 150 °C, VR = VR rated
VR = 200 V
6
100
-
CT
23
Revision: 21-Jan-2021
Document Number: 95813
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000