Datasheet > VS-16CTQ

VS-16CTQ

更新时间： 2024-09-30 12:01:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	166K
描述
Schottky Rectifier, 2 x 8 A

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中文翻译

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VS-16CTQ 数据手册

VS-16CTQ...SPbF, VS-16CTQ...-1PbF Series

Vishay High Power Products

Schottky Rectifier, 2 x 8 A

VS-16CTQ...-1PbF

FEATURES

VS-16CTQ...SPbF

• 175 °C T_Joperation

• Center tap configuration

• Low forward voltage drop

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

• High frequency operation

• Guard ring for enhanced ruggedness and long

term reliability

Base

common

cathode

Base

common

cathode

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Halogen-free according to IEC 61249-2-21 definition

• Compliant to RoHS directive 2002/95/EC

• AEC-Q101 qualified

Common

cathode

Common

cathode

Anode

D²PAK

TO-262

DESCRIPTION

This center tap Schottky rectifier series has been optimized

for low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 175 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

PRODUCT SUMMARY

I_F(AV)

2 x 8 A

V_R

60 V to 100 V

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

60 to 100

850

t_p= 5 μs sine

V_F

8 Apk, T_J= 125 °C (per leg)

Range

0.58

T_J

- 55 to 175

°C

VOLTAGE RATINGS

VS-16CTQ060SPbF

VS-16CTQ060-1PbF VS-16CTQ080-1PbF VS-16CTQ100-1PbF

VS-16CTQ080SPbF

VS-16CTQ100SPbF

PARAMETER

SYMBOL

UNITS

Maximum DC reverse voltage

V_R

100

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average

forward current

See fig. 5

per leg

I_F(AV)

50 % duty cycle at T_C= 148 °C, rectangular waveform

per device

Maximum peak one cycle

non-repetitive surge current per leg

See fig. 7

Following any rated load

condition and with rated

5 μs sine or 3 μs rect. pulse

10 ms sine or 6 ms rect. pulse

850

I_FSM

275

V_RRMapplied

Non-repetitive avalanche energy per leg

Repetitive avalanche current per leg

E_AS

I_AR

T_J= 25 °C, I_AS= 0.50 A, L = 60 mH

7.50

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

0.50

Document Number: 94145

Revision: 12-Mar-10

For technical questions, contact: diodestech@vishay.com

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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与VS-16CTQ相关器件

型号	品牌	获取价格	描述	数据表
VS-16CTQ...S-M3	VISHAY	获取价格	High Performance Schottky Rectifier, 2 x 8 A
VS-16CTQ060-1HM3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 60V V(RRM), Silicon, TO-262AA,
VS-16CTQ060-1-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 60V V(RRM), Silicon, TO-262AA,
VS-16CTQ060-1PBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 60V V(RRM), Silicon, TO-262AA, HALOGEN FREE
VS-16CTQ060GPBF	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-16CTQ060HN3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 60V V(RRM), Silicon, TO-220AB,
VS-16CTQ060-M3	VISHAY	获取价格	High Performance Schottky Rectifier, 2 x 8 A
VS-16CTQ060-N3	VISHAY	获取价格	Low forward voltage drop
VS-16CTQ060PBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 60V V(RRM), Silicon, TO-220AB, ROHS COM
VS-16CTQ060SHM3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 60V V(RRM), Silicon, TO-263AB, D2PAK-3/2

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