Datasheet > VS-16CTQ080SHM3

VS-16CTQ080SHM3

更新时间： 2024-11-10 01:00:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	189K
描述
High frequency operation

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中文翻译

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数据手册

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VS-16CTQ080SHM3 数据手册

VS-16CTQ...SHM3, VS-16CTQ...-1HM3 Series

www.vishay.com

Vishay Semiconductors

High Performance Schottky Rectifier, 2 x 8 A

FEATURES

• 175 °C T_Joperation

D²PAK

TO-262

• Center tap configuration

• Low forward voltage drop

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

Base

common

cathode

Base

common

cathode

• High frequency operation

• Guard ring for enhanced ruggedness and long term

reliability

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

Common

Anode cathode Anode

Common

cathode

Anode

• AEC-Q101 qualified, meets JESD 201 class 1 whisker test

VS-16CTQ...-1HM3

VS-16CTQ...SHM3

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRODUCT SUMMARY

DESCRIPTION

I_F(AV)

2 x 8 A

60 V to 100 V

V_R

This center tap Schottky rectifier series has been optimized

for low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 175 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

V_Fat I_F

I_RM

0.58 V

7.0 mA at 125 °C

175 °C

T_Jmax.

E_AS

7.5 mJ

Package

Diode variation

TO-263AB (D²PAK), TO-262AA



Common cathode

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

60 to 100

850

t_p= 5 μs sine

V_F

8 A_pk, T_J= 125 °C (per leg)

Range

0.58

T_J

-55 to +175

°C

VOLTAGE RATINGS

VS-16CTQ060SHM3 VS-16CTQ080SHM3 VS-16CTQ100SHM3

VS-16CTQ060-1HM3 VS-16CTQ080-1HM3 VS-16CTQ100-1HM3

PARAMETER

SYMBOL

UNITS

Maximum DC reverse voltage

V_R

100

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES UNITS

per leg

Maximum average forward current

See fig. 5

I_F(AV)

50 % duty cycle at T_C= 148 °C, rectangular waveform

per device

Maximum peak one cycle non-repetitive surge

current per leg 

See fig. 7

5 μs sine or 3 μs rect. pulse

10 ms sine or 6 ms rect. pulse

Followingany rated load

condition and with rated

V_RRMapplied

850

I_FSM

275

Non-repetitive avalanche energy per leg

E_AS

I_AR

T_J= 25 °C, I_AS= 0.50 A, L = 60 mH

7.50

0.50

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Repetitive avalanche current per leg

Revision: 02-Mar-15

Document Number: 95861

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与VS-16CTQ080SHM3相关器件

型号	品牌	获取价格	描述	数据表
VS-16CTQ080S-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-16CTQ080SPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 80V V(RRM), Silicon, HALOGEN FREE AND ROHS
VS-16CTQ080STRLHM3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-16CTQ080STRL-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-16CTQ080STRLPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 80V V(RRM), Silicon, HALOGEN FREE AND ROHS
VS-16CTQ080STRRHM3	VISHAY	获取价格	High frequency operation
VS-16CTQ080STRR-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 80V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-16CTQ080STRRPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 80V V(RRM), Silicon, HALOGEN FREE AND ROHS
VS-16CTQ100-1HM3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 100V V(RRM), Silicon, TO-262AA,
VS-16CTQ100-1-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 100V V(RRM), Silicon, TO-262AA,

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