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VS-16CTQ080HN3 PDF预览

VS-16CTQ080HN3

更新时间: 2024-02-14 22:41:20
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
7页 748K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 80V V(RRM), Silicon, TO-220AB,

VS-16CTQ080HN3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSFM-T3Reach Compliance Code:unknown
ECCN代码:EAR99Factory Lead Time:26 weeks
风险等级:5.66其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.88 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:275 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
参考标准:AEC-Q101最大重复峰值反向电压:80 V
最大反向电流:550 µA表面贴装:NO
技术:SCHOTTKY端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-16CTQ080HN3 数据手册

 浏览型号VS-16CTQ080HN3的Datasheet PDF文件第2页浏览型号VS-16CTQ080HN3的Datasheet PDF文件第3页浏览型号VS-16CTQ080HN3的Datasheet PDF文件第4页浏览型号VS-16CTQ080HN3的Datasheet PDF文件第5页浏览型号VS-16CTQ080HN3的Datasheet PDF文件第6页浏览型号VS-16CTQ080HN3的Datasheet PDF文件第7页 
VS-16CTQ...HN3 Series  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 8 A  
FEATURES  
Base  
common  
cathode  
2
• 175 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
3
2
Anode  
Anode  
2
1
Common  
cathode  
1
3
TO-220AB  
• Guard ring for enhanced ruggedness and long  
term reliability  
• AEC-Q101 qualified  
PRODUCT SUMMARY  
• Meets JESD 201 class 2 whisker test  
Package  
TO-220AB  
2 x 8 A  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
VR  
60 V, 80 V, 100 V  
0.58 V  
DESCRIPTION  
VF at IF  
I
RM max.  
7 mA at 125 °C  
175 °C  
This center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
TJ max.  
Diode variation  
EAS  
Common cathode  
7.5 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
16  
UNITS  
Rectangular waveform  
A
V
60 to 100  
850  
tp = 5 μs sine  
A
VF  
8 Apk, TJ = 125 °C (per leg)  
Range  
0.58  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-16CTQ060HN3  
60  
VS-16CTQ080HN3  
VS-16CTQ100HN3  
100  
UNITS  
Maximum DC reverse voltage  
VR  
80  
V
Maximum working peak  
reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward  
per leg  
8
current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 148 °C, rectangular waveform  
A
per device  
16  
Maximum peak one cycle non-repetitive  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
850  
Following any rated load  
condition and with rated  
VRRM applied  
surge current per leg  
See fig. 7  
IFSM  
A
275  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.50  
Revision: 05-Mar-14  
Document Number: 94848  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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