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VS-16CTQ060SHM3

更新时间： 2024-02-01 12:55:04
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
8页 180K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 60V V(RRM), Silicon, TO-263AB, D2PAK-3/2

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VS-16CTQ060SHM3 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：D2PAK-3/2Reach Compliance Code：unknown
ECCN代码：EAR99Factory Lead Time：26 weeks
风险等级：5.67其他特性：FREE WHEELING DIODE
应用：GENERAL PURPOSE外壳连接：CATHODE
配置：COMMON CATHODE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：0.88 V
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
湿度敏感等级：1最大非重复峰值正向电流：275 A
元件数量：2相数：1
端子数量：2最高工作温度：175 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED参考标准：AEC-Q101
最大重复峰值反向电压：60 V最大反向电流：550 µA
表面贴装：YES技术：SCHOTTKY
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

VS-16CTQ060SHM3 数据手册

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VS-16CTQ...SHM3, VS-16CTQ...-1HM3 Series  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 8 A  
FEATURES  
• 175 °C TJ operation  
D2PAK  
TO-262  
• Center tap configuration  
• Low forward voltage drop  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
Base  
common  
cathode  
2
Base  
common  
cathode  
2
• High frequency operation  
• Guard ring for enhanced ruggedness and long term  
reliability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
2
2
1
1
3
3
Common  
Anode cathode Anode  
Common  
cathode  
Anode  
Anode  
• AEC-Q101 qualified, meets JESD 201 class 1 whisker test  
VS-16CTQ...-1HM3  
VS-16CTQ...SHM3  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
DESCRIPTION  
IF(AV)  
2 x 8 A  
60 V to 100 V  
VR  
This center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
VF at IF  
IRM  
0.58 V  
7.0 mA at 125 °C  
175 °C  
TJ max.  
EAS  
7.5 mJ  
Package  
Diode variation  
TO-263AB (D2PAK), TO-262AA  
Common cathode  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
16  
UNITS  
Rectangular waveform  
A
V
60 to 100  
850  
tp = 5 μs sine  
A
VF  
8 Apk, TJ = 125 °C (per leg)  
Range  
0.58  
V
TJ  
-55 to +175  
°C  
VOLTAGE RATINGS  
VS-16CTQ060SHM3 VS-16CTQ080SHM3 VS-16CTQ100SHM3  
VS-16CTQ060-1HM3 VS-16CTQ080-1HM3 VS-16CTQ100-1HM3  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
60  
80  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
per leg  
8
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 148 °C, rectangular waveform  
A
per device  
16  
Maximum peak one cycle non-repetitive surge  
current per leg   
See fig. 7  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
Followingany rated load  
condition and with rated  
VRRM applied  
850  
IFSM  
A
275  
Non-repetitive avalanche energy per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
7.50  
0.50  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Repetitive avalanche current per leg  
Revision: 02-Mar-15  
Document Number: 95861  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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