5秒后页面跳转
VS-12TQ045STRRHM3 PDF预览

VS-12TQ045STRRHM3

更新时间: 2024-11-12 01:14:35
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
7页 159K
描述
High Performance Schottky Rectifier, 15 A

VS-12TQ045STRRHM3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:D2PAK-3/2Reach Compliance Code:unknown
ECCN代码:EAR99Factory Lead Time:26 weeks
风险等级:5.68其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.71 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:250 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):245
参考标准:AEC-Q101最大重复峰值反向电压:45 V
最大反向电流:1750 µA表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

VS-12TQ045STRRHM3 数据手册

 浏览型号VS-12TQ045STRRHM3的Datasheet PDF文件第2页浏览型号VS-12TQ045STRRHM3的Datasheet PDF文件第3页浏览型号VS-12TQ045STRRHM3的Datasheet PDF文件第4页浏览型号VS-12TQ045STRRHM3的Datasheet PDF文件第5页浏览型号VS-12TQ045STRRHM3的Datasheet PDF文件第6页浏览型号VS-12TQ045STRRHM3的Datasheet PDF文件第7页 
VS-12TQ035SHM3, VS-12TQ040SHM3, VS-12TQ045SHM3  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 15 A  
FEATURES  
• 150 °C TJ operation  
Base  
cathode  
2
• Very low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
3
1
D2PAK  
N/C  
Anode  
• Guard ring for enhanced ruggedness and long  
term reliability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
PRODUCT SUMMARY  
• AEC-Q101 qualified, meets JESD 201, class 1 whisker  
test  
IF(AV)  
15 A  
VR  
35 V, 40 V, 45 V  
0.50 V  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
VF at IF  
IRM max.  
TJ max.  
EAS  
70 mA at 125 °C  
150 °C  
DESCRIPTION  
The VS-12TQ...SHM3 Schottky rectifier series has been  
optimized for very low forward voltage drop, with moderate  
leakage. The proprietary barrier technology allows for  
reliable operation up to 150 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
freewheeling diodes, and reverse battery protection.  
16 mJ  
Package  
Diode variation  
TO-263AB (D2PAK)  
Single die  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
15  
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
Rectangular waveform  
A
V
Range  
35 to 45  
990  
tp = 5 μs sine  
15 Apk, TJ = 125 °C  
Range  
A
0.50  
V
TJ  
-55 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-12TQ035SHM3  
35  
VS-12TQ040SHM3  
VS-12TQ045SHM3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
40  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 120 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
15  
A
Maximum peak one cycle  
non-repetitive surge current  
See fig. 7  
Following any rated  
load condition and with  
rated VRRM applied  
5 μs sine or 3 μs rect. pulse  
990  
IFSM  
A
10 ms sine or 6 ms rect. pulse  
250  
16  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 2.4 A, L = 5.5 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
2.4  
Revision: 24-Feb-15  
Document Number: 95853  
1
For technical questions within your region: DiodesAmericas@vishay.com, iodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与VS-12TQ045STRRHM3相关器件

型号 品牌 获取价格 描述 数据表
VS-12TQ045STRR-M3 VISHAY

获取价格

Rectifier Diode, Schottky, 1 Phase, 1 Element, 45V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-12TQPBF VISHAY

获取价格

Schottky Rectifier, 15 A
VS-12TTS08HM3 VISHAY

获取价格

High Voltage, Phase Control Thyristor, 12 A
VS-12TTS08-M3 VISHAY

获取价格

Silicon Controlled Rectifier, 12.5A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB
VS-12TTS08PBF VISHAY

获取价格

Thyristor High Voltage, Phase Control SCR, 12.5 A
VS-12TTS08SLHM3 VISHAY

获取价格

Thyristor Surface Mount, Phase Control SCR, 8 A
VS-12TTS08S-M3 VISHAY

获取价格

Silicon Controlled Rectifier, 12.5A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-263AB
VS-12TTS08SPBF VISHAY

获取价格

Silicon Controlled Rectifier, 12.5 A, 800 V, SCR, HALOGEN FREE AND ROHS COMPLIANT, SMD-220
VS-12TTS08STRL-M3 VISHAY

获取价格

Silicon Controlled Rectifier, 12.5A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-263AB
VS-12TTS08STRLPBF VISHAY

获取价格

THYRISTOR SCR 800V 140A 3PIN D2PAK - Tape and Reel