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VS-12TTS08S-M3 PDF预览

VS-12TTS08S-M3

更新时间: 2024-11-11 21:12:11
品牌 Logo 应用领域
威世 - VISHAY 栅极
页数 文件大小 规格书
8页 195K
描述
Silicon Controlled Rectifier, 12.5A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-263AB, D2PAK-3/2

VS-12TTS08S-M3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:16 weeks
风险等级:5.32外壳连接:ANODE
配置:SINGLE最大直流栅极触发电流:15 mA
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大均方根通态电流:12.5 A
断态重复峰值电压:800 V重复峰值反向电压:800 V
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:40
触发设备类型:SCRBase Number Matches:1

VS-12TTS08S-M3 数据手册

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VS-12TTS08S-M3 Series  
www.vishay.com  
Vishay Semiconductors  
Thyristor Surface Mount, Phase Control SCR, 8 A  
FEATURES  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
Anode  
2, 4  
4
• Designed  
JEDEC®-JESD 47  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
and  
qualified  
according  
2
3
1
Cathode  
3
Gate  
1
TO-263AB (D2PAK)  
APPLICATIONS  
• Input rectification and crow-bar (soft start)  
PRODUCT SUMMARY  
• Vishay input diodes, switches and output rectifiers which  
are available in identical package outlines  
Package  
Diode variation  
IT(AV)  
TO-263AB (D2PAK)  
Single SCR  
8 A  
DESCRIPTION  
The VS-12TTS08S-M3 High Voltage Series of silicon  
controlled rectifiers are specifically designed for medium  
power switching and phase control applications. The glass  
passivation technology used has reliable operation up to  
125 °C junction temperature.  
V
DRM/VRRM  
800 V  
VTM  
1.2 V  
IGT  
15 mA  
TJ  
-40 to +125 °C  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE  
THREE-PHASE BRIDGE  
UNITS  
Capacitive input filter TA = 55 °C, TJ = 125 °C,  
common heatsink of 1 °C/W  
13.5  
17  
A
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
VALUES  
UNITS  
IT(AV)  
Sinusoidal waveform  
8
12.5  
A
IT(RMS)  
VRRM/VDRM  
ITSM  
800  
V
A
110  
VT  
8 A, TJ = 25 °C  
1.2  
V
dV/dt  
150  
V/μs  
A/μs  
°C  
dI/dt  
100  
TJ  
Range  
-40 to +125  
VOLTAGE RATINGS  
PART NUMBER  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VDRM, MAXIMUM PEAK  
DIRECT VOLTAGE  
V
IRRM/IDRM  
AT 125 °C  
mA  
VS-12TTS08S-M3  
800  
800  
1.0  
Revision: 09-Jul-15  
Document Number: 94892  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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