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VS-12TTS08-M3 PDF预览

VS-12TTS08-M3

更新时间: 2024-11-11 20:08:47
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页数 文件大小 规格书
7页 185K
描述
Silicon Controlled Rectifier, 12.5A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-220AB,

VS-12TTS08-M3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:1.62配置:SINGLE
最大直流栅极触发电流:15 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
最大均方根通态电流:12.5 A断态重复峰值电压:800 V
重复峰值反向电压:800 V表面贴装:NO
端子面层:MATTE TIN OVER NICKEL端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
触发设备类型:SCRBase Number Matches:1

VS-12TTS08-M3 数据手册

 浏览型号VS-12TTS08-M3的Datasheet PDF文件第2页浏览型号VS-12TTS08-M3的Datasheet PDF文件第3页浏览型号VS-12TTS08-M3的Datasheet PDF文件第4页浏览型号VS-12TTS08-M3的Datasheet PDF文件第5页浏览型号VS-12TTS08-M3的Datasheet PDF文件第6页浏览型号VS-12TTS08-M3的Datasheet PDF文件第7页 
VS-12TTS08PbF, VS-12TTS08-M3  
www.vishay.com  
Vishay Semiconductors  
High Voltage Phase Control Thyristor, 12 A  
FEATURES  
2
(A)  
• Designed and qualified according to  
JEDEC-JESD47  
• 125 °C max. operating junction temperature  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
3
2
1
1 (K)  
(G) 3  
TO-220AB  
Available  
APPLICATIONS  
• Typical usage is in input rectification crowbar (soft start)  
and AC switch in motor control, UPS, welding, and battery  
charge.  
PRODUCT SUMMARY  
Package  
TO-220AB  
Single SCR  
8 A  
Diode variation  
DESCRIPTION  
IT(AV)  
VDRM/VRRM  
VTM  
The VS-12TTS08... high voltage series of silicon controlled  
rectifiers are specifically designed for medium power  
switching and phase control applications. The glass  
passivation technology used has reliable operation up to  
125 °C junction temperature.  
800 V  
1.2 V  
IGT  
15 mA  
TJ  
- 40 °C to 125 °C  
OUTPUT CURRENT IN TYPICAL APPLICATIONS  
APPLICATIONS  
SINGLE-PHASE BRIDGE  
THREE-PHASE BRIDGE  
UNITS  
Capacitive input filter TA = 55 °C, TJ = 125 °C,  
common heatsink of 1 °C/W  
13.5  
17  
A
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
VALUES  
8
UNITS  
IT(AV)  
Sinusoidal waveform  
A
IT(RMS)  
VDRM/VRRM  
ITSM  
12.5  
800  
V
A
110  
VT  
8 A, TJ = 25 °C  
1.2  
V
dV/dt  
150  
V/µs  
A/µs  
°C  
dI/dt  
100  
TJ  
Range  
- 40 to 125  
VOLTAGE RATINGS  
PART NUMBER  
VRRM, MAXIMUM  
PEAK VOLTAGE  
V
VDRM, MAXIMUM PEAK  
DIRECT VOLTAGE  
V
IRRM/IDRM  
AT 125 °C  
mA  
VS-12TTS08PbF, VS-12TTS08-M3  
800  
800  
1.0  
Revision: 26-Jul-13  
Document Number: 94380  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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