VS-10CTQ150PbF, VS-10CTQ150-N3
www.vishay.com
Vishay Semiconductors
Schottky Rectifier, 2 x 5 A
FEATURES
Base
common
cathode
2
• 175 °C TJ operation
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
Anode
Anode
2
encapsulation for enhanced mechanical strength
and moisture resistance
Common
cathode
1
3
TO-220AB
• Guard ring for enhanced ruggedness and long
term reliability
PRODUCT SUMMARY
• Compliant to RoHS Directive 2002/95/EC
Package
TO-220AB
2 x 5 A
150 V
• Designed and qualified according to JEDEC-JESD47
IF(AV)
• Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
VR
VF at IF
0.73 V
DESCRIPTION
I
RM max.
7 mA at 125 °C
175 °C
This center tap Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
TJ max.
Diode variation
EAS
Common cathode
6.75 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
10
UNITS
Rectangular waveform
A
V
150
tp = 5 μs sine
620
A
VF
5 Apk, TJ = 125 °C (per leg)
Range
0.73
V
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VS-10CTQ150PbF VS-10CTQ150-N3
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
VR
150
150
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average
forward current
See fig. 5
per leg
5
IF(AV)
50 % duty cycle at TC = 155 °C, rectangular waveform
A
per device
10
Maximum peak one cycle
non-repetitive surge current per leg
See fig. 7
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
620
Following any rated load
condition and with rated
IFSM
A
VRRM applied
115
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TJ = 25 °C, IAS = 0.30 A, L = 150 mH
6.75
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
0.30
Revision: 22-Aug-11
Document Number: 94115
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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