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VS-10CTQ150P

更新时间: 2022-02-26 12:09:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 172K
描述
Schottky Rectifier, 2 x 5 A

VS-10CTQ150P 数据手册

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VS-10CTQ150PbF, VS-10CTQ150-N3  
www.vishay.com  
Vishay Semiconductors  
Schottky Rectifier, 2 x 5 A  
FEATURES  
Base  
common  
cathode  
2
• 175 °C TJ operation  
• Center tap configuration  
• Low forward voltage drop  
• High frequency operation  
• High  
purity,  
high  
temperature  
epoxy  
Anode  
Anode  
2
encapsulation for enhanced mechanical strength  
and moisture resistance  
Common  
cathode  
1
3
TO-220AB  
• Guard ring for enhanced ruggedness and long  
term reliability  
PRODUCT SUMMARY  
• Compliant to RoHS Directive 2002/95/EC  
Package  
TO-220AB  
2 x 5 A  
150 V  
• Designed and qualified according to JEDEC-JESD47  
IF(AV)  
• Halogen-free according to IEC 61249-2-21 definition  
(-N3 only)  
VR  
VF at IF  
0.73 V  
DESCRIPTION  
I
RM max.  
7 mA at 125 °C  
175 °C  
This center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
TJ max.  
Diode variation  
EAS  
Common cathode  
6.75 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
10  
UNITS  
Rectangular waveform  
A
V
150  
tp = 5 μs sine  
620  
A
VF  
5 Apk, TJ = 125 °C (per leg)  
Range  
0.73  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VS-10CTQ150PbF VS-10CTQ150-N3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
VR  
150  
150  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
5
IF(AV)  
50 % duty cycle at TC = 155 °C, rectangular waveform  
A
per device  
10  
Maximum peak one cycle  
non-repetitive surge current per leg  
See fig. 7  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
620  
Following any rated load  
condition and with rated  
IFSM  
A
VRRM applied  
115  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 0.30 A, L = 150 mH  
6.75  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.30  
Revision: 22-Aug-11  
Document Number: 94115  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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