VS-10CVH02-M3
Vishay Semiconductors
www.vishay.com
Hyperfast Rectifier, 2 x 5 A FRED Pt®
FEATURES
• Hyperfast recovery time
eSMP® Series
Base
common
cathode
• 175 °C max. operating junction temperature
• Low forward voltage drop reduced Qrr and soft
recovery
4
4
• Low leakage current
• Very low profile - typical height of 1.3 mm
• Ideal for automated placement
• Polyimide passivation for high reliability standard
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
2
1
2
Common
cathode
3
1
3
Anode
Anode
SlimDPAK (TO-252AE)
• Meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
3
D
DESCRIPTION / APPLICATIONS
3D Models
State of the art hyper fast recovery rectifiers designed with
optimized performance of forward voltage drop, hyper fast
recovery time, and soft recovery.
PRIMARY CHARACTERISTICS
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in the
AC/DC section of SMPS inverters or as freewheeling diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce
over dissipation in the switching element and snubbers.
IF(AV)
2 x 5 A
200 V
0.74 V
16 ns
VR
VF at IF
trr (typ.)
TJ max.
175 °C
Package
SlimDPAK (TO-252AE)
Common cathode
Circuit configuration
MECHANICAL DATA
Case: SlimDPAK (TO-252AE)
Molding compound meets UL 94 V-0 flammability rating
Halogen-free, RoHS-compliant
Terminals: matte tin plated leads, solderable per
J-STD-002
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
200
V
per leg
5
10
Average rectified forward current
IF(AV)
TC = 165 °C
TJ = 25 °C, 10 ms sine pulse wave
per device
per leg
Operating junction and storage temperatures
A
Non-repetitive peak surge current
IFSM
100
TJ, TStg
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage, blocking voltage
VBR, VR
IR = 100 μA
200
-
-
IF = 5 A
-
-
-
-
-
-
-
0.90
1.0
0.74
0.85
-
1.04
1.17
0.84
1.05
4
IF = 10 A
V
Forward voltage
VF
IF = 5 A, TJ = 150 °C
IF = 10 A, TJ = 150 °C
VR = VR rated
Reverse leakage current per leg
Junction capacitance per leg
IR
μA
pF
TJ = 150 °C, VR = VR rated
VR = 200 V
-
80
CT
17
-
Revision: 18-Feb-2022
Document Number: 96097
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000