VS-10CTQ150S-M3, VS-10CTQ150-1-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 5 A
FEATURES
• 175 °C TJ operation
TO-263AB (D2PAK)
TO-262AA
• Center tap configuration
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Base
common
cathode
Base
common
cathode
2
2
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• Designed and qualified according to JEDEC®-JESD47
2
2
1
1
3
3
Common
cathode
Common
cathode
Anode
Anode
Anode
Anode
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
VS-10CTQ150S-M3
VS-10CTQ150-1-M3
DESCRIPTION
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
IF(AV)
2 x 5 A
150 V
VR
VF at IF
IRM
0.93 V
7 mA at 125 °C
175 °C
TJ max.
Diode variation
EAS
Common cathode
5 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
10
UNITS
Rectangular waveform
A
V
150
tp = 5 μs sine
620
A
VF
5 Apk, TJ = 125 °C (per leg)
Range
0.73
V
TJ
-55 to +175
°C
VOLTAGE RATINGS
VS-10CTQ150S-M3
VS-10CTQ150-1-M3
PARAMETER
SYMBOL
UNITS
Maximum DC reverse voltage
VR
150
V
Maximum working peak reverse voltage
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
50 % duty cycle at TC = 155 °C, rectangular waveform
VALUES
UNITS
per leg
5
Maximum average
forward current, see fig. 5
IF(AV)
A
per device
10
Following any rated load
condition and with rated
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
TJ = 25 °C, IAS = 1 A, L = 10 mH
620
Maximum peak one cycle non-repetitive
IFSM
A
surge current per leg, see fig. 7
115
5
V
RRM applied
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1
Revision: 28-Jul-14
Document Number: 95729
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000