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VS-10CTQ150STRR-M3 PDF预览

VS-10CTQ150STRR-M3

更新时间: 2024-11-26 01:11:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 204K
描述
Center tap configuration

VS-10CTQ150STRR-M3 数据手册

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VS-10CTQ150S-M3, VS-10CTQ150-1-M3  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 5 A  
FEATURES  
• 175 °C TJ operation  
TO-263AB (D2PAK)  
TO-262AA  
• Center tap configuration  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
Base  
common  
cathode  
Base  
common  
cathode  
2
2
• Guard ring for enhanced ruggedness and long term  
reliability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
• Designed and qualified according to JEDEC®-JESD47  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
VS-10CTQ150S-M3  
VS-10CTQ150-1-M3  
DESCRIPTION  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK), TO-262AA  
This center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
IF(AV)  
2 x 5 A  
150 V  
VR  
VF at IF  
IRM  
0.93 V  
7 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Common cathode  
5 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
10  
UNITS  
Rectangular waveform  
A
V
150  
tp = 5 μs sine  
620  
A
VF  
5 Apk, TJ = 125 °C (per leg)  
Range  
0.73  
V
TJ  
-55 to +175  
°C  
VOLTAGE RATINGS  
VS-10CTQ150S-M3  
VS-10CTQ150-1-M3  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
150  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 155 °C, rectangular waveform  
VALUES  
UNITS  
per leg  
5
Maximum average  
forward current, see fig. 5  
IF(AV)  
A
per device  
10  
Following any rated load  
condition and with rated  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1 A, L = 10 mH  
620  
Maximum peak one cycle non-repetitive   
IFSM  
A
surge current per leg, see fig. 7  
115  
5
V
RRM applied  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1
Revision: 28-Jul-14  
Document Number: 95729  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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