是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | UNCASED CHIP, S-XUUC-N2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.46 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏源导通电阻: | 0.8 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 65 pF | JESD-30 代码: | S-XUUC-N2 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | SQUARE | 封装形式: | UNCASED CHIP |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | NO LEAD | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VP1216N1 | SUPERTEX |
获取价格 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs | |
VP1216N2 | SUPERTEX |
获取价格 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs | |
VP1216N5 | SUPERTEX |
获取价格 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs | |
VP1216ND | SUPERTEX |
获取价格 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs | |
VP1220N1 | SUPERTEX |
获取价格 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs | |
VP1220N2 | SUPERTEX |
获取价格 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs | |
VP1220N5 | SUPERTEX |
获取价格 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs | |
VP1220ND | SUPERTEX |
获取价格 |
P-Channel Enhancement-Mode Vertical DMOS Power FETs | |
VP122-B22LL-00000 | Carling Technologies |
获取价格 |
Rocker Switch, Quick Connect Terminal, Rocker Actuator, Panel Mount, | |
VP122-B22SS-00000 | Carling Technologies |
获取价格 |
Rocker Switch, Quick Connect Terminal, Rocker Actuator, Panel Mount, |