VP0109
Thermal Characteristics
ID
ID
Power Dissipation
†
Package
IDR
IDRM
@TC = 25OC
(continuous)†
(pulsed)
TO-92
-250mA
-800mA
1.0W
-250mA
-800A
Notes:
†
ID (continuous) is limited by max rated Tj .
Electrical Characteristics (TA = 25°C unless otherwise specified)
Sym
BVDSS
VGS(th)
Parameter
Min
Typ
Max
-
Units Conditions
Drain-to-source breakdown voltage
Gate threshold voltage
-90
-
-
V
V
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
-1.5
-3.5
6.5
-100
-10
ΔVGS(th) Change in VGS(th) with temperature
-
-
-
5.8
-1.0
-
mV/OC VGS = VDS, ID = -1.0mA
IGSS
Gate body leakage current
nA
µA
VGS = ±20V, VDS = 0V
VGS = 0V, VDS = Max Rating
IDSS
Zero gate voltage drain current
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
-
-
-1.0
mA
A
-0.15
-0.25
-1.2
11
-
VGS = -5.0V, VDS = -25V
VGS = -10V, VDS = -25V
VGS = -5.0V, ID = -100mA
VGS = -10V, ID = -500mA
ID(ON)
On-state drain current
-0.5
-
-
-
-
15
8.0
1.0
Static drain-to-source
on-state resistance
RDS(ON)
Ω
6.0
ΔRDS(ON) Change in RDS(ON) with temperature
0.55
%/OC VGS = -10V, ID = -500mA
mmho VDS = -25V, ID = -500mA
GFS
CISS
COSS
CRSS
td(ON)
tr
Forward transconductance
Input capacitance
150
190
45
-
-
-
-
-
-
-
-
-
-
60
30
8.0
6.0
10
12
10
-2.0
-
VGS = 0V,
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
22
pF
VDS = -25V,
f = 1.0MHz
3.0
4.0
3.0
8.0
4.0
-1.2
400
VDD = -25V,
ID = -500mA,
RGEN = 25Ω
Rise time
ns
td(OFF)
tf
Turn-off delay time
Fall time
VSD
Diode forward voltage drop
Reverse recovery time
V
VGS = 0V, ISD = -1.0A
VGS = 0V, ISD = -1.0A
trr
ns
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
Pulse
10%
Generator
INPUT
RGEN
90%
t(OFF)
-10V
t(ON)
td(ON)
D.U.T.
tr
td(OFF)
tf
INPUT
OUTPUT
0V
RL
90%
90%
OUTPUT
VDD
10%
10%
VDD
Doc.# DSFP-VP0109
C082313
Supertex inc.
www.supertex.com
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