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VP0109N3-GP014 PDF预览

VP0109N3-GP014

更新时间: 2024-02-27 05:49:00
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
5页 637K
描述
SMALL SIGNAL, FET

VP0109N3-GP014 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:compliant风险等级:5.62
Base Number Matches:1

VP0109N3-GP014 数据手册

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VP0109  
Thermal Characteristics  
ID  
ID  
Power Dissipation  
Package  
IDR  
IDRM  
@TC = 25OC  
(continuous)†  
(pulsed)  
TO-92  
-250mA  
-800mA  
1.0W  
-250mA  
-800A  
Notes:  
ID (continuous) is limited by max rated Tj .  
Electrical Characteristics (TA = 25°C unless otherwise specified)  
Sym  
BVDSS  
VGS(th)  
Parameter  
Min  
Typ  
Max  
-
Units Conditions  
Drain-to-source breakdown voltage  
Gate threshold voltage  
-90  
-
-
V
V
VGS = 0V, ID = -1.0mA  
VGS = VDS, ID = -1.0mA  
-1.5  
-3.5  
6.5  
-100  
-10  
ΔVGS(th) Change in VGS(th) with temperature  
-
-
-
5.8  
-1.0  
-
mV/OC VGS = VDS, ID = -1.0mA  
IGSS  
Gate body leakage current  
nA  
µA  
VGS = ±20V, VDS = 0V  
VGS = 0V, VDS = Max Rating  
IDSS  
Zero gate voltage drain current  
VDS = 0.8 Max Rating,  
VGS = 0V, TA = 125OC  
-
-
-1.0  
mA  
A
-0.15  
-0.25  
-1.2  
11  
-
VGS = -5.0V, VDS = -25V  
VGS = -10V, VDS = -25V  
VGS = -5.0V, ID = -100mA  
VGS = -10V, ID = -500mA  
ID(ON)  
On-state drain current  
-0.5  
-
-
-
-
15  
8.0  
1.0  
Static drain-to-source  
on-state resistance  
RDS(ON)  
Ω
6.0  
ΔRDS(ON) Change in RDS(ON) with temperature  
0.55  
%/OC VGS = -10V, ID = -500mA  
mmho VDS = -25V, ID = -500mA  
GFS  
CISS  
COSS  
CRSS  
td(ON)  
tr  
Forward transconductance  
Input capacitance  
150  
190  
45  
-
-
-
-
-
-
-
-
-
-
60  
30  
8.0  
6.0  
10  
12  
10  
-2.0  
-
VGS = 0V,  
Common source output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
22  
pF  
VDS = -25V,  
f = 1.0MHz  
3.0  
4.0  
3.0  
8.0  
4.0  
-1.2  
400  
VDD = -25V,  
ID = -500mA,  
RGEN = 25Ω  
Rise time  
ns  
td(OFF)  
tf  
Turn-off delay time  
Fall time  
VSD  
Diode forward voltage drop  
Reverse recovery time  
V
VGS = 0V, ISD = -1.0A  
VGS = 0V, ISD = -1.0A  
trr  
ns  
Notes:  
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)  
2. All A.C. parameters sample tested.  
Switching Waveforms and Test Circuit  
0V  
Pulse  
10%  
Generator  
INPUT  
RGEN  
90%  
t(OFF)  
-10V  
t(ON)  
td(ON)  
D.U.T.  
tr  
td(OFF)  
tf  
INPUT  
OUTPUT  
0V  
RL  
90%  
90%  
OUTPUT  
VDD  
10%  
10%  
VDD  
Doc.# DSFP-VP0109  
C082313  
Supertex inc.  
www.supertex.com  
2

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