Datasheet > VP0109ND(VF15)

VP0109ND(VF15)

更新时间： 2024-02-04 16:56:26

品牌	Logo	应用领域
超科 - SUPERTEX		输入元件开关晶体管
页数	文件大小	规格书
5页	616K
描述
Small Signal Field-Effect Transistor, 0.25A I(D), 90V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-2

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VP0109ND(VF15) 技术参数

生命周期：	Active	包装说明：	UNCASED CHIP, S-XUUC-N2
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.62	其他特性：	HIGH INPUT IMPEDANCE
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	90 V
最大漏极电流 (ID)：	0.25 A	最大漏源导通电阻：	8 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	8 pF
JESD-30 代码：	S-XUUC-N2	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
封装主体材料：	UNSPECIFIED	封装形状：	SQUARE
封装形式：	UNCASED CHIP	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	表面贴装：	YES
端子形式：	NO LEAD	端子位置：	UPPER
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

VP0109ND(VF15) 数据手册

VP0109

P-Channel Enhancement-Mode

Vertical DMOS FETs

Features

General Description

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

The Supertex VP0109 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors, and the

high input impedance and positive temperature coefﬁcient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

► Low C_ISSand fast switching speeds

► High input impedance and high gain

► Excellent thermal stability

► Integral source-to-drain diode

Applications

► Motor controls

► Converters

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

► Ampliﬁers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Ordering Information

R_DS(ON)

(max)

(Ω)

I_D(ON)

(min)

(mA)

Package Options

Device

BV_DSS/BV_DGS

(V)

TO-92

Die*

VP0109

VP0109N3-G

VP0109ND

-90

8.0

-500

-G indicates package is RoHS compliant (‘Green’)

MIL visual screening available.

Pin Conﬁguration

DRAIN

SOURCE

Absolute Maximum Ratings

Parameter

GATE

Value

TO-92 (N3)

Drain-to-source voltage

Drain-to-gate voltage

BV_DSS

BV_DGS

Product Marking

SiVP

0 1 0 9

Y Y WW

YY = Year Sealed

WW = Week Sealed

Gate-to-source voltage

±20V

Operating and storage temperature

Soldering temperature*

-55°C to +150°C

+300°C

= “Green” Packaging

Package may or may not include the following marks: Si or

Absolute Maximum Ratings are those values beyond which damage to

the device may occur. Functional operation under these conditions is not

implied. Continuous operation of the device at the absolute rating level

may affect device reliability. All voltages are referenced to device ground.

TO-92 (N3)

Distance of 1.6mm from case for 10 seconds.

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

12 3 4 5

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与VP0109ND(VF15)相关器件

型号	品牌	获取价格	描述	数据表
VP010PN5	NJSEMI	获取价格	P-Channel Enhancement-Mode
VP0116N2	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.2A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
VP0116N3	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
VP0116N3P001	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
VP0116N3P002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
VP0116N3P003	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
VP0116N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
VP0116N3P006	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
VP0116N3P007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 160V, 1-Element, P-Channel, Silicon, Meta
VP0116N3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.1A I(D), 160V, 1-Element, P-Channel, Silicon, Meta

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