Datasheet > VP0109N3

VP0109N3

更新时间： 2024-02-24 12:42:00

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
4页	48K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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技术参数
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VP0109N3 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	GREEN PACKAGE-3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	7 weeks
风险等级：	1.23	其他特性：	HIGH INPUT IMPEDANCE
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	90 V
最大漏极电流 (Abs) (ID)：	0.25 A	最大漏极电流 (ID)：	0.25 A
最大漏源导通电阻：	8 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	8 pF	JEDEC-95代码：	TO-92
JESD-30 代码：	O-PBCY-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	峰值回流温度（摄氏度）：	NOT APPLICABLE
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	1 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	NO	端子面层：	Matte Tin (Sn)
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT APPLICABLE	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON

VP0109N3 数据手册

VP0104

VP0106

VP0109

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

I_D(ON)

BV_DGS

-40V

-60V

-90V

(max)

(min)

-0.5A

TO-92

Die^†

8.0Ω

VP0104N3

VP0106N3

VP0109N3

—

VP0109ND

Features

❏ Free from secondary breakdown

❏ Low power drive requirement

❏ Ease of paralleling

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

❏ Low C_ISSand fast switching speeds

❏ Excellent thermal stability

❏ Integral Source-Drain diode

❏ High input impedance and high gain

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

❏ Complementary N- and P-channel devices

Applications

❏ Motor controls

Package Option

❏ Converters

❏ Amplifiers

❏ Switches

❏ Power supply circuits

❏ Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

S G D

TO-92

Absolute Maximum Ratings

Drain-to-Source Voltage

BV_DSS

BV_DGS

Drain-to-Gate Voltage

Gate-to-Source Voltage

± 20V

-55°C to +150°C

300°C

Note: See Package Outline section for dimensions.

Operating and Storage Temperature

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

07/08/02

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

12 3 4

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