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VNDP1CHP-1 PDF预览

VNDP1CHP-1

更新时间: 2024-10-29 15:57:35
品牌 Logo 应用领域
威世 - VISHAY 开关晶体管
页数 文件大小 规格书
2页 42K
描述
Small Signal Field-Effect Transistor, 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

VNDP1CHP-1 技术参数

生命周期:Obsolete包装说明:UNCASED CHIP, S-XUUC-N2
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏源导通电阻:7.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:S-XUUC-N2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:UNCASED CHIP极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

VNDP1CHP-1 数据手册

 浏览型号VNDP1CHP-1的Datasheet PDF文件第2页 

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