VNH100N04

更新时间： 2024-10-28 22:15:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		接口集成电路驱动局域网
页数	文件大小	规格书
7页	94K
描述
”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET

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中文翻译

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技术参数
数据手册

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VNH100N04 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TO-218	包装说明：	,
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8542.39.00.01
风险等级：	5.92	Is Samacsys：	N
内置保护：	TRANSIENT; OVER CURRENT; THERMAL	输入特性：	SCHMITT TRIGGER
接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0	功能数量：	1
端子数量：	3	输出特性：	OPEN-DRAIN
输出电流流向：	SINK	标称输出峰值电流：	100 A
输出极性：	TRUE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
认证状态：	Not Qualified	最大压摆率：	0.5 mA
表面贴装：	NO	技术：	MOS
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	Base Number Matches：	1

VNH100N04 数据手册

VNH100N04

”OMNIFET”:

FULLY AUTOPROTECTED POWER MOSFET

TARGET DATA

TYPE

V_clamp

R_DS(on)

I_lim

VNH100N04

42 V

0.012 Ω

100 A

■

LINEAR CURRENT LIMITATION

THERMAL SHUT DOWN

SHORT CIRCUIT PROTECTION

INTEGRATED CLAMP

LOW CURRENT DRAWN FROM INPUT PIN

DIAGNOSTIC FEEDBACK THROUGH INPUT

■

ESD PROTECTION

DIRECT ACCESS TO THE GATE OF THE

POWER MOSFET (ANALOG DRIVING)

COMPATIBLE WITH STANDARD POWER

MOSFET

TO-218

■

STANDARD TO-218 PACKAGE

DESCRIPTION

current limitation and overvoltage clamp protect

the chip in harsh enviroments.

The VNH100N04 is a monolithic device made

using SGS-THOMSON Vertical Intelligent Power

M0 Technology, intended for replacement of

standard power MOSFETS in DC to 50 KHz

applications. Buit-in thermal shut-down, linear

Fault feedback can be detected by monitoring the

voltage at the input pin.

BLOCK DIAGRAM

1/7

September 1994

12 3 4 5 6 7

中文翻译

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