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VNDQ3CHP PDF预览

VNDQ3CHP

更新时间: 2024-10-29 20:32:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 141K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

VNDQ3CHP 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N配置:Single
FET 技术:METAL-OXIDE SEMICONDUCTOR工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:N-CHANNEL
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

VNDQ3CHP 数据手册

 浏览型号VNDQ3CHP的Datasheet PDF文件第2页浏览型号VNDQ3CHP的Datasheet PDF文件第3页浏览型号VNDQ3CHP的Datasheet PDF文件第4页浏览型号VNDQ3CHP的Datasheet PDF文件第5页浏览型号VNDQ3CHP的Datasheet PDF文件第6页 

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TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | CHIP