Datasheet > VN4012L-GP014

VN4012L-GP014

更新时间： 2024-11-09 01:00:47

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
3页	568K
描述
N-Channel Enhancement-Mode Vertical DMOS FET

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技术参数
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VN4012L-GP014 技术参数

生命周期：	Transferred	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.62
Base Number Matches：	1

VN4012L-GP014 数据手册

Supertex inc.

VN4012

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

This enhancement-mode (normally-off) transistor utilizes

a vertical DMOS structure and Supertex’s well-proven,

silicon-gate manufacturing process. This combination

produces a device with the power handling capabilities

of bipolar transistors and the high input impedance and

positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

► Low C_ISSand fast switching speeds

► Excellent thermal stability

► Integral source-drain diode

► High input impedance and high gain

Applications

► Motor controls

► Converters

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

► Ampliﬁers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

Ordering Information

Product Summary

R_DS(ON)

(max)

12Ω

V_GS(TH)

(max)

1.8V

I_DSS

(min)

Part Number

Package Option

Packing

BV_DSS/BV_DGS

VN4012L-G

TO-92

1000/Bag

400V

150mA

VN4012L-G P002

VN4012L-G P003

VN4012L-G P005

VN4012L-G P013

VN4012L-G P014

Pin Conﬁguration

TO-92

2000/Reel

-G denotes a lead (Pb)-free / RoHS compliant package.

Contact factory for Wafer / Die availablity.

Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.

DRAIN

SOURCE

Absolute Maximum Ratings

Parameter

Value

GATE

TO-92

Drain-to-source voltage

Drain-to-gate voltage

BV_DSS

BV_DGS

±20V

Gate-to-source voltage

Product Marking

Operating and storage temperature

-55^OC to +150^OC

Si VN

4 0 1 2 L

YYWW

YY = Year Sealed

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

WW = Week Sealed

= “Green” Packaging

Package may or may not include the following marks: Si or

Typical Thermal Resistance

TO-92

Package

θ_ja

TO-92

132^OC/W

Doc.# DSFP-VN4012

B082013

Supertex inc.

www.supertex.com

12 3

中文翻译

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与VN4012L-GP014相关器件

型号	品牌	获取价格	描述	数据表
VN4012LP002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.16A I(D), 400V, 1-Element, N-Channel, Silicon, Met
VN4012LP003	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.16A I(D), 400V, 1-Element, N-Channel, Silicon, Met
VN4012LP004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.16A I(D), 400V, 1-Element, N-Channel, Silicon, Met
VN4012LP005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.16A I(D), 400V, 1-Element, N-Channel, Silicon, Met
VN4012LP011	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.16A I(D), 400V, 1-Element, N-Channel, Silicon, Met
VN4012LP013	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.16A I(D), 400V, 1-Element, N-Channel, Silicon, Met
VN4012LP015	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.16A I(D), 400V, 1-Element, N-Channel, Silicon, Met
VN4012LP016	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.16A I(D), 400V, 1-Element, N-Channel, Silicon, Met
VN4012LTA	TEMIC	获取价格	Small Signal Field-Effect Transistor, 0.16A I(D), 400V, 1-Element, N-Channel, Silicon, Met
VN4012LTR1	VISHAY	获取价格	160mA, 400V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA

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