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VN46AFD-1 PDF预览

VN46AFD-1

更新时间: 2024-09-16 15:57:35
品牌 Logo 应用领域
威世 - VISHAY 局域网脉冲晶体管
页数 文件大小 规格书
2页 40K
描述
Power Field-Effect Transistor, 1.46A I(D), 40V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

VN46AFD-1 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.82外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:40 V
最大漏极电流 (ID):1.46 A最大漏源导通电阻:3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):10 pF
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
功耗环境最大值:15 W最大脉冲漏极电流 (IDM):3 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICON最大关闭时间(toff):15 ns
最大开启时间(吨):15 nsBase Number Matches:1

VN46AFD-1 数据手册

 浏览型号VN46AFD-1的Datasheet PDF文件第2页 

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