生命周期: | Obsolete | 包装说明: | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 500 V | 最大漏极电流 (ID): | 0.2 A |
最大漏源导通电阻: | 16 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 20 pF | JEDEC-95代码: | TO-92 |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 1 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | BOTTOM |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VN0650N3P018 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.2A I(D), 500V, 1-Element, N-Channel, Silicon, Meta |
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VN0650N5 | SUPERTEX |
获取价格 |
Power Field-Effect Transistor, 1A I(D), 500V, 16ohm, 1-Element, N-Channel, Silicon, Metal- |
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VN0650ND | SUPERTEX |
获取价格 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
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VN06-52-E | STMICROELECTRONICS |
获取价格 |
IC,PERIPHERAL DRIVER,1 DRIVER,ZIP,5PIN,PLASTIC |
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VN0655 | NJSEMI |
获取价格 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
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VN0655_15 | NJSEMI |
获取价格 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
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VN0655N2 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.35A I(D), 550V, 1-Element, N-Channel, Silicon, Met |
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VN0655N3 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.15A I(D), 550V, 1-Element, N-Channel, Silicon, Met |
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VN0655N3 | NJSEMI |
获取价格 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
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VN0655N3P001 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, 0.15A I(D), 550V, 1-Element, N-Channel, Silicon, Met |
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