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VN0660 PDF预览

VN0660

更新时间: 2024-01-09 18:40:52
品牌 Logo 应用领域
NJSEMI /
页数 文件大小 规格书
2页 156K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

VN0660 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIE包装说明:UNCASED CHIP, S-XUUC-N3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.91配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏源导通电阻:20 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):20 pF
JESD-30 代码:S-XUUC-N3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:SQUARE
封装形式:UNCASED CHIP峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:TIN LEAD端子形式:NO LEAD
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

VN0660 数据手册

 浏览型号VN0660的Datasheet PDF文件第2页 

与VN0660相关器件

型号 品牌 获取价格 描述 数据表
VN0660N2 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.35A I(D), 600V, 1-Element, N-Channel, Silicon, Met
VN0660N3 NJSEMI

获取价格

N-Channel Enhancement-Mode Vertical DMOS FETs
VN0660N3P002 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.15A I(D), 600V, 1-Element, N-Channel, Silicon, Met
VN0660N3P007 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.15A I(D), 600V, 1-Element, N-Channel, Silicon, Met
VN0660N3P008 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.15A I(D), 600V, 1-Element, N-Channel, Silicon, Met
VN0660N3P011 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.15A I(D), 600V, 1-Element, N-Channel, Silicon, Met
VN0660N3P012 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.15A I(D), 600V, 1-Element, N-Channel, Silicon, Met
VN0660N3P014 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.15A I(D), 600V, 1-Element, N-Channel, Silicon, Met
VN0660N3P015 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.15A I(D), 600V, 1-Element, N-Channel, Silicon, Met
VN0660N3P016 SUPERTEX

获取价格

Small Signal Field-Effect Transistor, 0.15A I(D), 600V, 1-Element, N-Channel, Silicon, Met