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VN0808L PDF预览

VN0808L

更新时间： 2024-09-28 22:29:35
品牌 Logo 应用领域
超科 - SUPERTEX 晶体小信号场效应晶体管开关输入元件
页数 文件大小 规格书
2页 435K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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中文翻译

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VN0808L 技术参数

是否Rohs认证：不符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.25Is Samacsys：N
其他特性：HIGH INPUT IMPEDANCE配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：80 V最大漏极电流 (Abs) (ID)：0.3 A
最大漏极电流 (ID)：0.3 A最大漏源导通电阻：4 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：10 pF
JEDEC-95代码：TO-92JESD-30 代码：O-PBCY-W3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：1 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：WIRE
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

VN0808L 数据手册

 浏览型号VN0808L的Datasheet PDF文件第2页 
VN0808  
N-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
BVDSS  
/
RDS(ON)  
ID(ON)  
BVDGS  
(max)  
(min)  
TO-92  
80V  
4.0Ω  
1.5A  
VN0808L  
Features  
Advanced DMOS Technology  
These enhancement-mode (normally-off) transistors utilize a  
vertical DMOS structure and Supertex’s well-proven silicon-gate  
manufacturing process. This combination produces devices with  
the power handling capabilities of bipolar transistors and with the  
high input impedance and positive temperature coefficient inher-  
ent in MOS devices. Characteristic of all MOS structures, these  
devices are free from thermal runaway and thermally-induced  
secondary breakdown.  
❏
❏
❏
❏
❏
❏
❏
❏
Free from secondary breakdown  
Low power drive requirement  
Ease of paralleling  
Low CISS and fast switching speeds  
Excellent thermal stability  
Integral Source-Drain diode  
High input impedance and high gain  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Complementary N- and P-channel devices  
Applications  
❏
❏
❏
❏
❏
❏
Motor controls  
Package Option  
Converters  
Amplifiers  
Switches  
Power supply circuits  
Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
Absolute Maximum Ratings  
Drain-to-Source Voltage  
Drain-to-Gate Voltage  
Gate-to-Source Voltage  
BVDSS  
S G D  
BVDGS  
TO-92  
±30V  
Operating and Storage Temperature  
-55°C to +150°C  
300°C  
Soldering Temperature*  
* Distance of 1.6 mm from case for 10 seconds.  
Note: See Package Outline section for dimensions.  
11/12/01  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
12

中文翻译

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VN0808L 替代型号

型号 品牌 替代类型 描述 数据表
VN0808L-G SUPERTEX

完全替代

 Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal
BST72A NXP

功能相似

 N-channel vertical D-MOS transistor
VN0808L VISHAY

功能相似

 N-Channel 80- and 90-V (D-S) MOSFETs

与VN0808L相关器件

型号 品牌 获取价格 描述 数据表
VN0808L-G SUPERTEX

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 		Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal
VN0808LP001 SUPERTEX

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 		Small Signal Field-Effect Transistor, 0.26A I(D), 80V, 1-Element, N-Channel, Silicon, Meta
VN0808LP003 SUPERTEX

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 		Small Signal Field-Effect Transistor, 0.3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal
VN0808LP004 SUPERTEX

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 		Small Signal Field-Effect Transistor, 0.26A I(D), 80V, 1-Element, N-Channel, Silicon, Meta
VN0808LP005 SUPERTEX

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 		Small Signal Field-Effect Transistor, 0.26A I(D), 80V, 1-Element, N-Channel, Silicon, Meta
VN0808LP006 SUPERTEX

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 		Small Signal Field-Effect Transistor, 0.26A I(D), 80V, 1-Element, N-Channel, Silicon, Meta
VN0808LP007 SUPERTEX

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 		Small Signal Field-Effect Transistor, 0.26A I(D), 80V, 1-Element, N-Channel, Silicon, Meta
VN0808LP015 SUPERTEX

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 		Small Signal Field-Effect Transistor, 0.26A I(D), 80V, 1-Element, N-Channel, Silicon, Meta
VN0808LP016 SUPERTEX

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 		Small Signal Field-Effect Transistor, 0.26A I(D), 80V, 1-Element, N-Channel, Silicon, Meta
VN0808LP017 SUPERTEX

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 		Small Signal Field-Effect Transistor, 0.26A I(D), 80V, 1-Element, N-Channel, Silicon, Meta

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