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VN0808M18-1 PDF预览

VN0808M18-1

更新时间: 2024-01-28 23:00:12
品牌 Logo 应用领域
威世 - VISHAY 晶体管
页数 文件大小 规格书
2页 45K
描述
Small Signal Field-Effect Transistor, 0.33A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-237AA, TO-237, 3 PIN

VN0808M18-1 技术参数

生命周期:Obsolete零件包装代码:TO-237AA
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.63
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:80 V
最大漏极电流 (ID):0.33 A最大漏源导通电阻:4 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):10 pF
JEDEC-95代码:TO-237AAJESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管元件材料:SILICONBase Number Matches:1

VN0808M18-1 数据手册

 浏览型号VN0808M18-1的Datasheet PDF文件第2页 

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