Datasheet > VN10K

VN10K

更新时间： 2024-01-15 11:09:41

品牌	Logo	应用领域
超科 - SUPERTEX		晶体晶体管开关
页数	文件大小	规格书
4页	456K
描述
N-Channel Enhancement-Mode Vertical DMOS FETs

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技术参数
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VN10K 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	17 weeks	风险等级：	5.04
配置：	Single	最大漏极电流 (Abs) (ID)：	0.27 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-609代码：	e3
湿度敏感等级：	1	最高工作温度：	150 °C
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.625 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Matte Tin (Sn)
处于峰值回流温度下的最长时间：	40	Base Number Matches：	1

VN10K 数据手册

VN10K

N-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Standard Commercial Devices

Order Number / Package

BV_DSS

R_DS(ON)

(max)

I_D(ON)

BV_DGS

(min)

TO-92

60V

5.0Ω

0.75A

VN10KN3

Features

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

❏

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C_ISSand fast switching speeds

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Complementary N- and P-channel devices

Applications

❏

Motor controls

Package Option

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

± 30V

S G D

TO-92

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

Note: See Package Outline section for dimensions.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

12 3 4

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