生命周期: | Obsolete | 零件包装代码: | TO-237AA |
包装说明: | CYLINDRICAL, O-PBCY-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.56 |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 0.31 A |
最大漏源导通电阻: | 5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 5 pF | JEDEC-95代码: | TO-237AA |
JESD-30 代码: | O-PBCY-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VN10KN | ETC |
获取价格 |
N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs | |
VN10KN3 | SUPERTEX |
获取价格 |
N-Channel Enhancement-Mode Vertical DMOS FETs | |
VN10KN3-G | SUPERTEX |
获取价格 |
N-Channel Enhancement-Mode Vertical DMOS FET | |
VN10KN3-GP002 | MICROCHIP |
获取价格 |
310mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | |
VN10KN3-G-P002 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, | |
VN10KN3-GP005 | SUPERTEX |
获取价格 |
暂无描述 | |
VN10KN3-GP005 | MICROCHIP |
获取价格 |
310mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 | |
VN10KN3-GP013 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor | |
VN10KN3-G-P013 | SUPERTEX |
获取价格 |
Small Signal Field-Effect Transistor, | |
VN10KN3-GP014 | MICROCHIP |
获取价格 |
310mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |