Datasheet > VN10KN3-P002-G

VN10KN3-P002-G

更新时间： 2024-10-01 12:03:15

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
6页	631K
描述
N-Channel Enhancement-Mode Vertical DMOS FET

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VN10KN3-P002-G 数据手册

Supertex inc.

VN10K

N-Channel Enhancement-Mode

Vertical DMOS FET

Features

General Description

This enhancement-mode (normally-off) transistor utilizes a

vertical DMOS structure and Supertex’s well-proven, silicon-

gate manufacturing process. This combination produces a

devicewiththepowerhandlingcapabilitiesofbipolartransistors

and the high input impedance and positive temperature

coefﬁcient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

► Free from secondary breakdown

► Low power drive requirement

► Ease of paralleling

► Low C_ISSand fast switching speeds

► Excellent thermal stability

► Integral source-drain diode

► High input impedance and high gain

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Applications

► Motor controls

► Converters

► Ampliﬁers

► Switches

► Power supply circuits

► Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Ordering Information

R_DS(ON)

I_D(ON)

Package

Device

TO-92

BV_DSS/BV_DGS

(max)

(Ω)

(min)

(mA)

(V)

VN10K

VN10KN3-G

5.0

750

For packaged products, -G indicates package is RoHS compliant (‘Green’).

Consult factory for die / wafer form part numbers.

Refer to Die Speciﬁcation VF21 for layout and dimensions.

Absolute Maximum Ratings

Pin Conﬁguration

Parameter

Value

BV_DSS

BV_DGS

±30V

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

DRAIN

SOURCE

Operating and storage temperature

-55^OC to +150^OC

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

GATE

TO-92 (N3)

Product Marking

SiVN

1 0 K

YYWW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

Package may or may not include the following marks: Si or

TO-92 (N3)

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

12 3 4 5 6

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与VN10KN3-P002-G相关器件

型号	品牌	获取价格	描述	数据表
VN10KN3P003	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.31A I(D), 60V, 1-Element, N-Channel, Silicon, Meta
VN10KN3-P003	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
VN10KN3-P003-G	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET
VN10KN3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
VN10KN3P006	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
VN10KN3P007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
VN10KN3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
VN10KN3P011	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
VN10KN3P013	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal
VN10KN3-P013	SUPERTEX	获取价格	N-Channel Enhancement-Mode Vertical DMOS FET

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